Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Koval, Olga Yu.; Fedorov, Vladimir V.; Bolshakov, A D; Fedina, Sergey V.; Kochetkov, Fedor M.; Neplokh, Vladimir; Sapunov, G. A.; Dvoretckaia, Liliia N.; Kirilenko, D. A.; Shtrom, I. V.; Islamova, Regina M.; Cirlin, G. É.; Tchernycheva, Maria; Serov, A. Yu.; Mukhin, I. S.

doi:10.3390/nano10112110

Cited by 21 publications

(17 citation statements)

References 78 publications

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“…Finally, NW growth was interrupted by closing both Ga and P 2 shutters and subsequent sample cooling. An in situ analysis of the NW crystal structure performed with reflection high energy electron diffraction (RHEED) patterns demonstrated that the described growth conditions yielded stable formation of GaP NWs with a zinc-blende structure as it was previously reported in [36][37][38].…”

Section: Gapas/gap Nw Led Array Synthesissupporting

confidence: 62%

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

et al. 2021

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We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent electrodes involving single-walled carbon nanotubes. The GaPAs/GaP axial nanowire arrays were grown by molecular beam epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films has the main electroluminescence line at 670 nm. Membrane-based light-emitting diodes (LEDs) were compared with GaPAs/GaP NW array LED devices processed directly on Si growth substrate revealing similar electroluminescence properties. Demonstrated membrane-based red LEDs are opening an avenue for flexible full color inorganic devices.

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Section: Gapas/gap Nw Led Array Synthesissupporting

confidence: 62%

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

et al. 2021

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“…According to planar GaP growth, we established the stoichiometric V/III flux ratio of 6. In all of the growth runs, at the first stage P 2 BEP was set at 8.4 × 10 −7 Torr (V/III ratio of 12) to obtain stable self-catalytic VLS NW formation reported previously [ 4 , 39 ]. At the second stage, P 2 flux was increased up to 1.26 × 10 −6 Torr (V/III ratio of 18) to promote gradual catalytic droplet consumption, which seems the most prominent way to control the catalyst droplet shape and thus the nucleation of the WZ phase [ 40 ].…”

Section: Resultsmentioning

confidence: 99%

“…Typical cross-section SEM-images of the synthesized samples are presented in Figure 1 b–d. One can note that vertical VLS NWs growth occurs simultaneously with the unwanted three-dimensional islands formed via vapor-solid (VS) mechanism [ 39 , 41 ]. Parasitic 3D islands are depicted with magenta polygons in Figure 1 and possess irregular shapes which can be associated with a large number of structural defects, as will be shown further in the XRD section.…”

Section: Resultsmentioning

confidence: 99%

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

et al. 2021

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Control and analysis of the crystal phase in semiconductor nanowires are of high importance due to the new possibilities for strain and band gap engineering for advanced nanoelectronic and nanophotonic devices. In this letter, we report the growth of the self-catalyzed GaP nanowires with a high concentration of wurtzite phase by molecular beam epitaxy on Si (111) and investigate their crystallinity. Varying the growth temperature and V/III flux ratio, we obtained wurtzite polytype segments with thicknesses in the range from several tens to 500 nm, which demonstrates the high potential of the phase bandgap engineering with highly crystalline self-catalyzed phosphide nanowires. The formation of rotational twins and wurtzite polymorph in vertical nanowires was observed through complex approach based on transmission electron microscopy, powder X-ray diffraction, and reciprocal space mapping. The phase composition, volume fraction of the crystalline phases, and wurtzite GaP lattice parameters were analyzed for the nanowires detached from the substrate. It is shown that the wurtzite phase formation occurs only in the vertically-oriented nanowires during vapor-liquid-solid growth, while the wurtzite phase is absent in GaP islands parasitically grown via the vapor-solid mechanism. The proposed approach can be used for the quantitative evaluation of the mean volume fraction of polytypic phase segments in heterostructured nanowires that are highly desirable for the optimization of growth technologies.

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“…To summarize, the current work has revealed the key role of the design of ligands and PMCs in terms of the broad variation of mechanical and SH properties and provides a route to produce a variety of cobalt-incorporated SH materials exhibiting useful elastic properties. The obtained cobalt(II)-incorporating polysiloxanes, particularly Co-Bipy-PDMSs, are promising polymers for the fabrication of highly elastic SH membranes, e.g., for optoelectronic devices, , and as coatings for electrokinetic separations and electrostatic discharge materials. , …”

Section: Discussionmentioning

confidence: 99%

Structural Features of Polymer Ligand Environments Dramatically Affect the Mechanical and Room-Temperature Self-Healing Properties of Cobalt(II)-Incorporating Polysiloxanes

et al. 2021

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Cobalt(II)-pyridinedicarboxamide-co-polydimethylsiloxane (Co-Py-PDMSs) and cobalt(II)-bipyridinedicarboxamide-co-polydimethylsiloxane (Co-Bipy-PDMSs) polymer−metal complexes were prepared by complexation between Py-PDMSs or Bipy-PDMSs ligands and cobalt(II); the metal content in these complexes varied from 0.09 to 2.41 wt %. The Co II binding patterns (the Co−N Py and Co−O coordination in Co-Py-PDMSs and Co−N Bipy in Co-Bipy-PDMSs) were established by UV−vis and IR methods and by comparison with model Co II complexes exhibiting relevant O,N,O-and N,N-coordination environments, respectively. The mechanical properties of the polymer−metal complexes were controlled by the coordination of Py-PDMSs or Bipy-PDMSs to Co II at various metal-toligand molar ratios (1:(1−6)) and by the variation of the polydimethylsiloxane unit length (M n : 850−900, 5000, or 25 000 g•mol −1 ). Utilization of the chelated Py-PDMSs and Bipy-PDMSs polymer ligands, which are capable of tri-or bidentate binding of Co II , led to (2−4)-fold increases in tensile strength (up to 1.75 MPa) and much higher elongation at break ((2−3)-fold increase up to 2100%) compared with the previously reported Co II -based polymer− ligand systems featuring monodentate ligation entities. Changing the main-chain ligand from Py-PDMSs to Bipy-PDMSs led to an increase in tensile strength of (2−4)-fold in comparison with Py-PDMS and a lower hysteresis (4%). The room temperature selfhealing efficiency was up to 96% for Co-Py-PDMSs and 40% for Co-Bipy-PDMSs, as measured for a polydimethylsiloxane unit with M n = 25 000 g•mol −1 .

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Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Cited by 21 publications

References 78 publications

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

Red GaPAs/GaP Nanowire-Based Flexible Light-Emitting Diodes

XRD Evaluation of Wurtzite Phase in MBE Grown Self-Catalyzed GaP Nanowires

Structural Features of Polymer Ligand Environments Dramatically Affect the Mechanical and Room-Temperature Self-Healing Properties of Cobalt(II)-Incorporating Polysiloxanes

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