1995
DOI: 10.1016/0040-6090(95)06577-6
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Structural and optical properties of electrodeposited Bi2S3, Sb2S3 and As2S3 thin films

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Cited by 183 publications
(69 citation statements)
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“…Among the various metal sulfides, antimony trisulfide is a promising candidate in microwave devices and various optoelectronic devices [3]. Antimony trisulfide (Sb 2 S 3 ) thin films were obtained by various sophisticated techniques such as electrodeposition [4], dip-dry technique [5], spray pyrolysis [6], chemical bath deposition [7], successive ionic layer adsorption and reaction (SILAR method) [8] and vacuum evaporation [9,10]. The thermal vacuum evaporation technique appears to be a relatively simple, inexpensive method to prepare homogeneous films with a stoichiometric composition.…”
Section: Introductionmentioning
confidence: 99%
“…Among the various metal sulfides, antimony trisulfide is a promising candidate in microwave devices and various optoelectronic devices [3]. Antimony trisulfide (Sb 2 S 3 ) thin films were obtained by various sophisticated techniques such as electrodeposition [4], dip-dry technique [5], spray pyrolysis [6], chemical bath deposition [7], successive ionic layer adsorption and reaction (SILAR method) [8] and vacuum evaporation [9,10]. The thermal vacuum evaporation technique appears to be a relatively simple, inexpensive method to prepare homogeneous films with a stoichiometric composition.…”
Section: Introductionmentioning
confidence: 99%
“…is the momentum matrix element. Similarly, we get the expression for the second order susceptibility [75]: [68] b Ref [69] c Ref [70] d Ref [71] e Ref [72] f Ref [24] g Ref [27] h Ref [23] ı Ref [22] Fig . 2 The total and projected density of states for Bi 2 S 3 that includes contributions of interband and intraband transitions to the second order susceptibility.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…The reduction potential of the CdSe in between the Cd and Se was also reported earlier Yesugade et al [21] and Lade et al [19].…”
Section: Linear Sweep Voltammetry Formentioning
confidence: 48%