“…[1−10] Carbon-incorporated silicon oxide is one of the promising candidates, because its photoluminescence (PL) covers the visible spectral range of 350-800 nm. [1] Recently, various carbon-incorporated silicon oxide light emitting materials have been developed, including amorphous Si:C:O:H films, [2] amorphous silicon oxycarbide (a-SiC x O y ) films, [3−4] hydrogenated amorphous silicon carbide (a-SiC:H) films, [5,6] and silicon-incorporated diamond-like carbon films. [7] These films are usually fabricated via thermal vapor deposition, [3] reactive dc-magnetron sputtering, [2,6] melt-spinning, [4] and plasma enhanced chemical vapor deposition (PECVD).…”