2010
DOI: 10.1016/j.apsusc.2010.02.054
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Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

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Cited by 12 publications
(7 citation statements)
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“…PSC samples are prepared by electrochemical etching of p-type a-Si 1 À x C x that deposited on p-type Si single crystals, which are grown by DC magnetron co-sputtering of p-type 6H-SiC polycrystalline and p-type Si single crystal [25]. The grown-in nitrogen concentration is about 10 18 cm À 3 .…”
Section: Experimental Methodsmentioning
confidence: 99%
“…PSC samples are prepared by electrochemical etching of p-type a-Si 1 À x C x that deposited on p-type Si single crystals, which are grown by DC magnetron co-sputtering of p-type 6H-SiC polycrystalline and p-type Si single crystal [25]. The grown-in nitrogen concentration is about 10 18 cm À 3 .…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The challenge to use silicon as an emitter device is to produce tunable PL in the entire visible range [3]. Several techniques have been employed to obtain silicon nanoparticles, such as sputtering [4][5][6], evaporation [7,8], PECVD [2,9], ionic implantation [10], among others. In general, these techniques produce a silicon-rich material by deposition or growth followed by annealing at high temperature to form silicon nanoparticles [2].…”
Section: Introductionmentioning
confidence: 99%
“…[1−10] Carbon-incorporated silicon oxide is one of the promising candidates, because its photoluminescence (PL) covers the visible spectral range of 350-800 nm. [1] Recently, various carbon-incorporated silicon oxide light emitting materials have been developed, including amorphous Si:C:O:H films, [2] amorphous silicon oxycarbide (a-SiC x O y ) films, [3−4] hydrogenated amorphous silicon carbide (a-SiC:H) films, [5,6] and silicon-incorporated diamond-like carbon films. [7] These films are usually fabricated via thermal vapor deposition, [3] reactive dc-magnetron sputtering, [2,6] melt-spinning, [4] and plasma enhanced chemical vapor deposition (PECVD).…”
Section: Introductionmentioning
confidence: 99%
“…[1] Recently, various carbon-incorporated silicon oxide light emitting materials have been developed, including amorphous Si:C:O:H films, [2] amorphous silicon oxycarbide (a-SiC x O y ) films, [3−4] hydrogenated amorphous silicon carbide (a-SiC:H) films, [5,6] and silicon-incorporated diamond-like carbon films. [7] These films are usually fabricated via thermal vapor deposition, [3] reactive dc-magnetron sputtering, [2,6] melt-spinning, [4] and plasma enhanced chemical vapor deposition (PECVD). [5,7] Silicone oil is also a kind of carbon-incorporated silicon oxide material.…”
Section: Introductionmentioning
confidence: 99%
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