Structural and optical properties of vanadium and hafnium nitride nanoscale films: effect of stoichiometry

Gueddaoui, H.; Maabed, S.; Schmerber, G.; Guemmaz, M.; Parlebas, J.C.

doi:10.1140/epjb/e2006-00350-9

Cited by 24 publications

(12 citation statements)

References 15 publications

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“…First, the decreased deposition rate is attributed to differential target poisoning (that is, target was nitrided). Similar result was reported by Gueddaoui et al [19]. Second, the reduced deposition rate is linked to decreased Ar + ion flux with increasing nitrogen flow ratio.…”

Section: Resultssupporting

confidence: 89%

Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

Jeng¹,

Liu²,

Chen³

2009

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 89%

Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

Jeng¹,

Liu²,

Chen³

2009

Journal of Alloys and Compounds

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“…[2][3][4]7 Similar results were obtained in terms of oxidation resistance. [12][13][14] While many researchers focus on the electrical and optical properties of HfN, [15][16][17][18] reported hardness values range from 20 GPa for HfN deposited by chemical vapor deposition 19 ͑CVD͒ to 25 GPa for epitaxial HfN͑001͒ deposited by magnetron sputtering. 11 Although TiAlN and CrAlN are successfully used in various industrial applications, there is a growing demand for new coating materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation on structure and properties of arc-evaporated HfAlN hard coatings

Franz

Mitterer

Lechthaler

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thermally enhanced mechanical properties of arc evaporated Ti 0.34 Al 0.66 N / TiN multilayer coatings HfAlN hard coatings were synthesized by cathodic arc evaporation from Hf 0.75 Al 0.25 targets at different bias voltages and N 2 pressures. Structural investigations by x-ray diffraction ͑XRD͒ revealed the formation of a face-centered cubic ͑fcc͒ structure with a change in the preferred orientation depending on the energetic growth conditions. This change in the crystal structure did not significantly influence the mechanical properties, e.g., hardness, where values ranging from 24 to 26 GPa were measured. The obtained fcc phase is stable up to 1000°C as no significant changes in the crystal structure could be observed after annealing in vacuum. Similar experiments in ambient air and subsequent analysis of the coatings by XRD and Raman spectroscopy revealed an onset temperature for oxidation in the range of 700-800°C and the formation of monoclinic HfO 2 as the dominating oxide phase. Ball-on-disk tests at different temperatures were performed in order to evaluate the tribological properties. The coefficient of friction ranged from 0.8 to 1.2 depending on the testing temperature while the best wear performance was obtained in the temperature range of 300-500°C.

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“…Experimental and fitted reflectances in the 500-4000 cm −1 range are presented in Figure 4(b). An extended Drude model (36,37) was used in the fits, which accounts for local compositional or structural inhomogeneities in the CrN film, leading to zones displaying either a metallic or a semi-conducting behaviour as was also observed in ZrN, HfN, and VN. For the as-deposited and annealed samples, a two-layer structure was considered: the first layer being the nitride film, and the second one the Si wafer with a dielectric function ε = 12.…”

Section: Electrical and Optical Analysesmentioning

confidence: 99%

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

Novaković

Traverse

Popović

et al. 2012

Radiation Effects and Defects in Solids

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We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 • C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V + ions to fluences of 1 × 10 17 and 2 × 10 17 ions/cm 2 . Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr 1−x V x N.

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Structural and optical properties of vanadium and hafnium nitride nanoscale films: effect of stoichiometry

Cited by 24 publications

References 15 publications

Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

Investigation on structure and properties of arc-evaporated HfAlN hard coatings

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

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