Structural and optical studies on hot wire chemical vapour deposited hydrogenated silicon films at low substrate temperature

PEDOT:PSS/SiNWs Hybrid Solar Cells With an Effective Nanocrystalline Silicon Back Surface Field Layer by Low Temperature Catalytic Diffusion

“…Figure shows Raman scattering spectra of the films with different catalytic‐treating time. It can be seen that with the increase of the treating time, the peak of the transverse optical (TO) mode gradually moves from 480 c −1 toward 520 cm −1 , which indicates that the films gradually change from amorphous silicon to nano‐crystalline silicon . The crystallization could be related to the abundance of hydrogen atoms in the gas phase, which may break the SiSi weak bonds by selective etching or promote the relaxation of the Si network by diffusion …”

Influence of Power on the Microstructure and Optical Properties of Microcrystalline Si Films

“…On the other hand, it is proved that hydrogen in the films could saturate the dangling bond and balance the stress existing in the Si crystal lattice. When the hydrogen concentration in the films decreases, Si crystal lattice would compress and the band gap would be cut down [9,10]. So less hydrogen concentration with increasing power is also beneficial to the improved band gap.…”

Perspectives on metal induced crystallization of a-Si and a-Ge thin films

“…80–85 The HWCVD is also known as catalytic CVD, is a new technology for depositing amorphous-semiconductors thin films at low temperatures without the use of plasma to decompose source gases. 86–88 Ebil et al . 86 deposited a-Si film (of 500–1000 nm thickness) by custom mode HWCVD system with load lock (base pressure of 6.67 × 10 −5 Pa) at a filament temperature of 430–1850 °C and deposition pressure of 3.33 Pa; silane was used as the source gas without hydrogen dilution.…”