Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition

Bhaduri, Ayana; Chaudhuri, Phalguni; Williamson, D. L.; Vignoli, S.; Ray, Partha Pratim; Longeaud, Christophe

doi:10.1063/1.2981190

Cited by 6 publications

(1 citation statement)

References 25 publications

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“…The increase of surface roughness with decrease of DC indicates nanocrystallites formation. We have recorded presence of nanocrystalline Si 0.5 Ge 0.5 by means of XRD in films deposited at DC= 75% and 50% [10]. The sample deposited with DC = 75% consists of the a-SiGe:H material with embedded nanocrystallites of isotropic shape and nearly uniform size distribution in the range of 6-8 nm as revealed from the TEM and AFM micrographs (Figs.…”

Section: Contributedmentioning

confidence: 99%

Fine particles in amorphous silicon germanium thin films

Bhaduri

Chaudhuri

2010

Phys. Status Solidi (c)

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We have regulated the number density and the size of the fine particles/clusters called nanoparticles into the a‐SiGe:H films deposited from silane and germane diluted in hydrogen by applying a square wave pulse modulations (SWPM) of the rf (13.56 MHz) amplitude in plasma enhanced chemical vapor deposition (PECVD). The plasma “on” time Ton and “off” time Toff were controlled over a wide range from 300 μsec to 30 msec. Growth rate (γr) of the number density (Nr) of the particles of size r shows a lognormal dependence on r. Tendency towards formation of nanocrystallites was observed on reducing the Ton. Ge content within nanocrystallites was found to increase with decrease in nanocrystallites size. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedmentioning

confidence: 99%

Fine particles in amorphous silicon germanium thin films

Bhaduri

Chaudhuri

2010

Phys. Status Solidi (c)

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Steady‐State Photocarrier Grating Method

Brüggemann

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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The excess-carrier properties of a photoexcited semiconductor are important indicators of its quality with respect to applications in optoelectronic devices or for studying the recombination physics. In contrast to the majority-carrier properties, which can be determined rather straightforwardly by stationary photocurrent measurements, the minority-carrier properties can only be revealed by more sophisticated methods. In this respect the steady-state photocarrier grating (SSPG) method has had an enormous impact since it was suggested by Ritter, Zeldov, and Weiser, named RZW hereafter, in 1986 [1].The SSPG method is based on the carrier diffusion under the presence of a spatial sinusoidal modulation in the photogeneration rate G, which induces a so-called photocarrier grating. From photocurrent measurements at different grating periods L, the ambipolar diffusion lengthL can be determined by an analysis that assumes ambipolar transport and charge neutrality.The proposal by RZW, following papers on the analysis [2, 3] and the simple setup triggered a rapid widespread application [4][5][6][7][8]. In parallel, critical and more in-depth accounts on the underlying theory were given to put the technique on a firm ground or to describe its limits when applied to semiconductors with traps. Ritter et al. [9], Balberg et al. [10, 11], Li [12], and Shah et al. [13] analyzed the transport equations, also with respect to the lifetime or relaxation time regimes. In the lifetime regime, the carrier lifetimes are longer than the dielectric relaxation time. The previous publications were later criticized by Hattori et al. [14] who performed a second-order perturbation approach and pointed out deficiencies of other earlier analyses. Nevertheless, Hattori et al. showed that under the conditions in the lifetime regime the analysis and evaluation of the SSPG method are correct. These authors also suggested a correction method to avoid incorrect values of L.A novel aspect was introduced by Abel and Bauer [15] who numerically solved the transport and Poisson equations and compared the solutions with a generalized theory which enables to study the SSPG results by the variation of L and/or electric j177 field E. These authors derive their expressions in terms of the mobility-lifetime product ðmtÞ min of the minority carriers, which can be determined from the SSPG method and related to L.More recently, Schmidt and Longeaud [16] developed a generalized derivation of the solution of the SSPG equations at low E. They identified the shortcomings in the previous derivations which differ from the numerical solution. Their approach also allows the SSPG experiment to be used for the density-of-states (DOS) determination.An important aspect is the above-mentioned association of L with the ðmtÞ min product of the minority carriers. Together with the majority-carrier mobility-lifetime product ðmtÞ maj at the same G from the photoconductivity s ph via s ph ¼ eGðmtÞ maj , where e equals 1.6 Â 10 À19 C, the excess-carrier properties can be related to e...

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Steady‐State Photocarrier Grating Method

Brüggemann

2016

Advanced Characterization Techniques for Thin Film Solar Cells

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Structural and optoelectronic properties of silicon germanium alloy thin films deposited by pulsed radio frequency plasma enhanced chemical vapor deposition

Cited by 6 publications

References 25 publications

Fine particles in amorphous silicon germanium thin films

Fine particles in amorphous silicon germanium thin films

Steady‐State Photocarrier Grating Method

Steady‐State Photocarrier Grating Method

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