The intrinsic and extrinsic doping properties of BiVO 4 , i.e., the formation energies and transition energy levels of defects and impurities, have been studied systematically by first-principles density-functional theory. We find that for doping caused by intrinsic defects, O vacancies are shallow donors and Bi vacancies are shallow acceptors.However, these defects compensate each other and can only lead to moderate n-type and p-type conductivities at Bi-rich and O-rich growth conditions, respectively. To obtain BiVO 4 with high n-type and p-type conductivities, which are required for forming ohmic contacts, extrinsic doping using foreign impurities is necessary. Our results reveal that Sr, Ca, Na, and K atoms on Bi sites are very shallow acceptors and have rather low