Structural and photoluminescence study of the quaternary alloys system CuIn(SxSe1−x)2

Zeaiter, K.; Llinares, Y.; Llinarès, C.

doi:10.1016/s0927-0248(99)00125-7

Cited by 18 publications

(12 citation statements)

References 27 publications

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“…(3) that the optical band gap does not vary linearly with x, but rather follow a parabolic behaviour. The results compare well with published results [7,8].…”

Section: Resultssupporting

confidence: 91%

Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Sheppard

Alberts

Botha

2008

Phys. Status Solidi (c)

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CuInSe2 has a band gap of about 1.0 eV, which limits the conversion efficiency of complete CuInSe2/CdS/ZnO devices. In order to increase the conversion efficiency of devices, it is necessary to increase the band gap value of the absorber films to about 1.2 eV. This can be achieved by systematically substituting some indium with a group III element and/or selenium with another group VI elements. The substitution of In and/or Se results in a shrinkage of the lattice parameters and thus an increase in the band gap value of the absorber films. However, this process is extremely complicated, especially for conventional two‐step growth processes in which metallic alloys are exposed to Se and/or S species. In this contribution, the optical and structural properties of homogeneous single‐phase CuIn(Se,S)2 alloys are demonstrated for the novel two‐step deposition process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…(3) that the optical band gap does not vary linearly with x, but rather follow a parabolic behaviour. The results compare well with published results [7,8].…”

Section: Resultssupporting

confidence: 91%

Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Sheppard

Alberts

Botha

2008

Phys. Status Solidi (c)

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“…As mentioned above, Ga incorporation causes a shift of the diffraction peaks to higher Bragg angles, in particular the highest peak (112), which causes a change of the lattice parameters a and c. Indeed, the variation of the two lattice parameters a and c with gallium composition given in figure 3 is found to be approximately linear as the latter is increased from zero (CuInSe 2 ) to one (CuGaSe 2 ), which is in agreement with Vegard law [19]. Therefore, CIGS films prepared using one step electro-deposition process is very close to the perfect tetragonal structure for which the lattice distortion is µ=c/a ~ 2) [20].…”

Section: Resultssupporting

confidence: 80%

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Saïdi

Alaya

Boujmil

et al. 2020

Current Applied Physics

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This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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“…Crystal parameters are in good agreement with that of polycrystalline CuIn(S,Se) 2 samples synthesized by high temperature solid state synthesis. 23 No additional peaks corresponding to crystallographic phases other than chalcopyrite are identified. The Cu-chalcogen and In-chalcogen site interatomic distances have been estimated to be 2.383 and 2.490 Å, respectively, while the Cu−S−In bond angles around S centered tetrahedron varies between 108.98 and 109.62−113.38°.…”

Section: Resultsmentioning

confidence: 99%

Single Molecular Precursor Solution for CuIn(S,Se)₂ Thin Films Photovoltaic Cells: Structure and Device Characteristics

Koehler

Lin

Sarua

et al. 2017

ACS Appl. Mater. Interfaces

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A single molecular precursor solution is described for the deposition of CuIn(S,Se) (CIS) film onto Mo-coated glass substrates by spin coating, followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrates the formation of a highly homogeneous and compact 1.1 μm thick CIS layer, with a MoSe under-layer. Atomic force microscopy reveals the presence of spherical grains between 400 and 450 nm, featuring surface corrugation in the range of 30 nm. Film composition is found to be in close agreement with that of the precursor solution. Diffuse reflectance spectroscopy shows a direct band gap (E) of 1.36 eV. Intensity and temperature dependence photoluminescence spectra show characteristic features associated with a donor-acceptor pair recombination mechanism, featuring activation energy of 34 meV. Over 85 solar cell devices with the configuration Mo/CIS/CdS/i-ZnO/Al:ZnO/Ni-Al and an total area of 0.5 cm were fabricated and tested. The champion cell shows a power efficiency of 3.4% with an open circuit voltage of 521 mV and short circuit current of 14 mA/cm under AM 1.5 illumination and an external quantum efficiency above 60%. Overall variation in each of solar cell parameters remains below 10% of the average value, demonstrating the remarkable homogeneity of this solution processing method. To understand the limitation of devices, the dependence of the open-circuit voltage and impedance spectra upon temperature were analyzed. The data reveal that the CuIn(S,Se)/CdS interface is the main recombination pathway with an activation energy of 0.79 eV as well as the presence of two "bulk" defect states with activation energies of 37 and 122 meV. We also estimated that the MoSe under-layer generates back contact barrier of 195 meV.

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Structural and photoluminescence study of the quaternary alloys system CuIn(SxSe1−x)2

Cited by 18 publications

References 27 publications

Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Single Molecular Precursor Solution for CuIn(S,Se)₂ Thin Films Photovoltaic Cells: Structure and Device Characteristics

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Structural and photoluminescence study of the quaternary alloys system CuIn(SxSe1−x)2

Cited by 18 publications

References 27 publications

Structural and optical characterization of single‐phase CuIn(Se,S)2 thin films deposited using a two‐step process

Structural and optical characterization of single‐phase CuIn(Se,S)2 thin films deposited using a two‐step process

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Single Molecular Precursor Solution for CuIn(S,Se)2 Thin Films Photovoltaic Cells: Structure and Device Characteristics

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Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Structural and optical characterization of single‐phase CuIn(Se,S)₂ thin films deposited using a two‐step process

Single Molecular Precursor Solution for CuIn(S,Se)₂ Thin Films Photovoltaic Cells: Structure and Device Characteristics