2012
DOI: 10.1016/j.jallcom.2011.11.129
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Structural and piezoelectric characteristics of BNT–BT0.05 thin films processed by sol–gel technique

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Cited by 72 publications
(37 citation statements)
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“…Since Takenaka et al [5,[23][24][25] first reported the piezoelectric properties of (1 − x)(Bi 0.5 Na 0.5 )TiO 3 -xBaTiO 3 (BNT-BT), polycrystalline ceramics and films of BNT-BT have been extensively studied to improve the piezoelectric performance, to investigate the phase diagram [24,[26][27][28], the domain structure [29,30], and the relaxor behavior [31][32][33][34][35], and to elucidate the effect of the application of E [27,28] etc. Single crystals of BNT-BT have been grown and the influence on dc-bias E on the phase stability [36] and the diffuse X-ray scattering [37] have been investigated.…”
Section: Open Accessmentioning
confidence: 99%
“…Since Takenaka et al [5,[23][24][25] first reported the piezoelectric properties of (1 − x)(Bi 0.5 Na 0.5 )TiO 3 -xBaTiO 3 (BNT-BT), polycrystalline ceramics and films of BNT-BT have been extensively studied to improve the piezoelectric performance, to investigate the phase diagram [24,[26][27][28], the domain structure [29,30], and the relaxor behavior [31][32][33][34][35], and to elucidate the effect of the application of E [27,28] etc. Single crystals of BNT-BT have been grown and the influence on dc-bias E on the phase stability [36] and the diffuse X-ray scattering [37] have been investigated.…”
Section: Open Accessmentioning
confidence: 99%
“…A little asymmetric behavior of the CV loop is due to the different deposition method used at top and bottom interfaces. 24) It is well known that the influence of DC bias field on the dielectric properties is mainly due to the pinning effect of DC bias field on the domain wall mobility. 33) We measured the dielectric constant under the DC bias field up to 300 kV/cm, as the motion of domain wall can be restricted by the DC bias field when the field is larger than the coercive field.…”
Section: )mentioning
confidence: 99%
“…As reported, chemical solution deposition, 16), 19) pulse laser deposition, 1),20),21) RF magnetron sputtering, 22) metal organic decomposition 23) and solgel deposition 24) are among the most widely used methods to fabricate the BNTBT thin films. The solgel method can offer good stoichiometry control of the film composition.…”
Section: Introductionmentioning
confidence: 99%
“…[42,43] It is a wellknown lead-free ferroelectric material and has been extensively documented in the literature recently. [44][45][46][47][48][49][50][51] BNT-BTs morphotropic phase boundary extends from 5 to 7 mol % BT.…”
Section: And2mentioning
confidence: 99%