Structural and surface morphological properties of chemically deposited Mo0.5W0.5S2 thin film

Abstract

Preparation of layered type semiconductor Mo 0.5 W 0.5 S 2 -thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS 2 and WS 2 phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10 -3 -10 -2 (9X cm) -1 .

Study of the near band-edge excitonic transition energies of the mixed layered compounds of Mo1-xWxSe2single crystals

“…[8][9][10][11] Similar mixed-layered crystals of compounds such as MoxW1-xSe2, Mo0.5W0.5Se2 and Mo0.02W0.98Se2 by using various methods have been published. [12][13][14] Our previously work, Mo1-xWxS2 single crystals have been experimentally realized to vary their bandgap values and temperature dependence of energies and broadening parameters of the band-edge excitons. 15,16 In this paper we report a detailed study of the temperature dependence of the piezoreflectance (PzR) measurements in the spectral range near the direct band gap of Mo1-xWxSe2 single crystals in the temperature range 25-300 K. The PzR spectra are fitted with a form of the Aspnes equation of the first-derivative Lorentzian line shape.…”