Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization

Lindorf, M.; Rohrmann, H.; Span, G.; Raoux, Simone; Jordan-Sweet, Jean; Albrecht, Manfred

doi:10.1063/1.4968571

Cited by 10 publications

(11 citation statements)

References 27 publications

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“…Recently, metal-induced crystallization (MIC) [92,113,114] has proved to be an interesting alternative to reduce the crystallization temperature required for SiGe. This process is based on the growth of the films on substrates with Au [115], Ag [116], Al [117], Ni [118], Cr [119],…”

Section: Thin Films: Improvement Of the Thermoelectric Performance Thmentioning

confidence: 99%

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Taborda¹,

Caballero‐Calero²,

MarisolMartín‐González³

2017

New Research on Silicon - Structure, Properties, Technology

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Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si 0.8 Ge 0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances and new approaches in silicon-germanium (Si 1−x Ge x) nanostructures for thermoelectric devices with high thermoelectric efficiency obtained through magnetron sputtering.

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Section: Thin Films: Improvement Of the Thermoelectric Performance Thmentioning

confidence: 99%

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Taborda¹,

Caballero‐Calero²,

MarisolMartín‐González³

2017

New Research on Silicon - Structure, Properties, Technology

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“…However, bulk-SiGe, formed by zone leveling (ZL) or hot press (HP) techniques, is generally too expensive, resulting in its use being limited to space applications. Therefore, technologies for forming SiGe thin films on insulating substrates using sputtering, , chemical vapor deposition (CVD), − solid-phase crystallization (SPC), , metal-induced crystallization (MIC), , and electrophoresis deposition (ED) have been developed. If a SiGe layer can be formed onto plastic, it will be possible to create flexible thermoelectric devices with high performance.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate

Kusano

Yamamoto

Nakata

et al. 2018

ACS Appl. Energy Mater.

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For developing thermoelectric thin-film devices using reliable inorganic materials, we investigated the synthesis of SiGe directly onto insulating substrates. An Al-induced layer exchange technique was employed, which enabled us to form SiGe on glass substrates at a low temperature (≤400 °C) in the whole SiGe composition range. The SiGe layers were observed to contain Al atoms in concentrations corresponding to their solid solubility limits during growth, which resulted in the formation of self-organically highly p-doped layers without requiring hightemperature-activation annealing. Results indicated that a high power factor (430 μW/mK 2 ) and a low process temperature were simultaneously achieved for SiGe on glass. A SiGe layer fabricated on a plastic substrate exhibited a power factor of 190 μW/mK 2 , which is higher than most thermoelectric films directly grown onto a plastic substrate. These achievements will present practical applications for flexible thin-film thermoelectrics with a high reliability.

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“…Conversely, the thin-film formation of SiGe can be achieved easily using various vapor deposition techniques. [4][5][6][7][8][9][10][11][12][13][14][15] Furthermore, mature Si process technologies can be applied, including lithography and Fermi-level control, which are essential for thermoelectric applications. Therefore, SiGe is a promising candidate for thin-film TEGs.…”

mentioning

confidence: 99%

“…Thin-film thermoelectric applications of SiGe have been studied using laser sintering, 4 sputtering, 5,6 chemical vapor deposition, [7][8][9][10][11] electrophoretic deposition, 12 solid-phase crystallization, 13,14 and metal-induced crystallization. 15 However, SiGe generally requires high temperatures for crystallization and dopant activation, which strictly limit its application. Metal-induced crystallization with layer exchange (LE) has overcome this problem.…”

mentioning

confidence: 99%

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

Tsuji

Murata²,

Yamamoto³

et al. 2020

Applied Physics Letters

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SiGe alloys are a promising material for highly reliable, human-friendly thin-film thermoelectric generators for micro-energy harvesting. However, it is difficult to obtain high performances at low thermal budgets in SiGe layers, especially in n-type materials. Ag-induced layer exchange enables the synthesis of Si 1Àx Ge x (x: 0-0.3) layers at 500 C and dynamically controls the Fermi level owing to the self-organizing manner of impurity doping during the layer exchange. Intrinsic, p-type (hole concentration >10 19 cm À3 ), and highly n-type (electron concentration >10 20 cm À3 ) SiGe layers are obtained using pure Ag, B-doped Ag, and As-doped Ag, respectively. Owing to the high carrier concentrations, the thermoelectric power factor at room temperature exhibits high values: 230 lW m À1 K À2 for the p-type and 1000 lW m À1 K À2 for the n-type. The latter value is the highest reported power factor at room temperature for SiGe formed below 1000 C. The dimensionless figure of merit is determined to be 0.19 from the power factor and the thermal conductivity of 1.6 W m À1 K À1 . A thermoelectric generator fabricated with the low-temperature SiGe layers demonstrates a relatively large output for thin films (50 nm): 1.4 nW at room temperature with a temperature difference of 15 C.

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Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization

Cited by 10 publications

References 27 publications

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Silicon‐Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate

Thin-film thermoelectric generator based on polycrystalline SiGe formed by Ag-induced layer exchange

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