2001
DOI: 10.1063/1.1416862
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Structural change in p-type porous silicon by thermal annealing

Abstract: The morphological change of p-type porous silicon during annealing has been investigated. The x-ray diffraction ͑XRD͒ pattern was composed of a sharp Bragg reflection peak and a diffuse scattering. The diffuse scattering is not related to the presence of the amorphous phase. The shape of the XRD pattern started to change at an annealing temperature as low as 400°C, and the 2 angle of the sharp peak varied at a temperature as low as 350°C. These changes at low temperatures seem to be closely related to the deso… Show more

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Cited by 84 publications
(48 citation statements)
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“…We have studied the properties and performed materials characterization of the Si-ncs produced by this method for a number of years [17,18] and our results are also in good agreement with the extensive literature on porous silicon (e.g. [21][22][23] and see also Supporting Information in [15]; additional details on the average size and size distribution can also be found in the Supporting Material).…”
Section: Methodssupporting
confidence: 84%
“…We have studied the properties and performed materials characterization of the Si-ncs produced by this method for a number of years [17,18] and our results are also in good agreement with the extensive literature on porous silicon (e.g. [21][22][23] and see also Supporting Information in [15]; additional details on the average size and size distribution can also be found in the Supporting Material).…”
Section: Methodssupporting
confidence: 84%
“…The remaining peak at 73.328 with relatively low intensity, as shown by star in Fig. 3 might be assigned to the diamond cubic structure of silicon [25]. The presence of silicon as impurity in epoxy/Sn composites has already been evidenced in the EDX of epoxy/ Sn27 vol% in Fig.…”
Section: Structural Characterization By Sem and Xrd Analysesmentioning
confidence: 78%
“…Figure a and b show different regions of the FTIR spectra with signatures of different bonding arrangements for all three different samples, unprocessed, DC‐microplasma treated and RF‐microplasma treated. We know that SiNCs produced by electrochemical etching are mostly terminated by hydrogen and at the same time Si‐dimers and dangling bonds may be present . The processing conditions affect the degree and the type of surface passivation.…”
Section: Resultsmentioning
confidence: 99%