Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films

Rusu, Dragos; Rusu, G.I.; Luca, D.

doi:10.12693/aphyspola.119.850

Cited by 99 publications

(46 citation statements)

References 28 publications

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“…Thus, the associated ZnO lattice parameters and the unit cell size were increased (Fig. S2, Supplementary Material) [42]. Naturally, both substitutional and interstitial Y dopants were present in the one-pot hydrothermal synthesized ZnO NRs.…”

Section: Morphology and Structure Characterizationmentioning

confidence: 96%

An enhanced gas ionization sensor from Y-doped vertically aligned conductive ZnO nanorods

Lee

Fang

Turner

et al. 2016

Sensors and Actuators B: Chemical

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A stable and highly sensitive gas ionization sensor (GIS) constructed from vertically aligned, conductive yttrium-doped ZnO nanorod (YZO NR) arrays is demonstrated. The conductive YZO NRs are synthesized using a facile one-pot hydrothermal method. At higher Y/Zn molar ratio, the aspect ratio of the YZO NRs is increased from 11 to 25. Doping with yttrium atoms decreases the electrical resistivity of ZnO NRs more than 100 fold. GIS measurements reveal a 6-fold enhancement in the sensitivity accompanied with a significant reduction in breakdown voltage from the highly conductive YZO NRs. Direct correlations between the resistivity of the NRs and GIS characteristics are established. 1 An Enhanced Gas Ionization Sensor from Y-doped Vertically Aligned Conductive ZnO Nanorods AbstractA stable and highly sensitive gas ionization sensor (GIS) constructed from vertically aligned, conductive yttrium-doped ZnO nanorod (YZO NR) arrays is demonstrated. The conductive YZO NRs are synthesized using a facile one-pot hydrothermal method. At higher Y/Zn molar ratio, the aspect ratio of the YZO NRs is increased from 11 to 25. Doping with yttrium atoms decreases the electrical resistivity of ZnO NRs more than 100 fold. GIS measurements reveal a 6-fold enhancement in the sensitivity accompanied with a significant reduction in breakdown voltage from the highly conductive YZO NRs. Direct correlations between the resistivity of the NRs and GIS characteristics are established.

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Section: Morphology and Structure Characterizationmentioning

confidence: 96%

An enhanced gas ionization sensor from Y-doped vertically aligned conductive ZnO nanorods

Lee

Fang

Turner

et al. 2016

Sensors and Actuators B: Chemical

View full text Add to dashboard Cite

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“…The average grain sizes were estimated on basis of X-ray diffraction measurements using Debye-Scherrer equation [3,17]. The crystallites preferred orientation in the layers can be quantitatively evaluated using texture coefficient, T C(hkl) [17,18].…”

Section: Resultsmentioning

confidence: 99%

“…The crystallites preferred orientation in the layers can be quantitatively evaluated using texture coefficient, T C(hkl) [17,18]. The diffraction spectra of the studied diamond layers, together with texture coefficients, are presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

Impedance study of undoped, polycrystalline diamond layers obtained by HF CVD

et al. 2017

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passivation layers. These films can be deposited by several techniques, such as Hot Filament Chemical Vapour Deposition (HF CVD), Microwave Plasma CVD (MP CVD), Plasma Jet CVD, or Flame CVD [2].The film characteristics depend on several different deposition process parameters, such as the gas composition and pressure, the substrate temperature, the energy of the impinging ions, etc [3]. The presence of hydrogen in the gas phase promotes the formation of sp 3 C structures but co-deposition of sp 2 carbon phase, as detected by Raman spectroscopy, also takes place [4].Due to its superior physical and chemical properties, diamond can be used as an electronic or optoelectronic material because of its high Johnson and Keyes figures of merit values [5]. However, the electrical and optical properties of diamond films strongly depend on the film preparation conditions. Compared with natural diamond, CVD diamond is usually polycrystalline and contains various defects produced during the deposition procedure. Therefore, it is necessary to establish the relationship between the preparation conditions and the structural and electrical properties of diamond films for electronic or optoelectronic applications.In general, polycrystalline diamond films can be considered as composed from diamond microcrystals oriented in different direction with respect to the substrate surface. The quality of diamond layers increases as the grain size increases starting from the substrate nucleation side to the top of the diamond layer [6].The larger grains induce a decrease of GB phase in the film what results that diamond layer will have smaller content of the sp 2 -hybridized carbon phase. The sizes of grain boundaries and thus concentration of sp 2 carbon phase eventually can lead to limitations in electronic performances of polycrystalline diamond layers. AbstractIn this paper, we report results of impedance measurements in polycrystalline diamond films deposited on n-Si using HF CVD method. The temperature was changed from 170 K up to RT and the scan frequency from 42 Hz to 5 MHz. The results of impedance measurement of the real and imaginary parts were presented in the form of a Cole-Cole plot in the complex plane. In the temperatures below RT, the observed impedance response of polycrystalline diamond was in the form of a single semicircular form. In order to interpret the observed response, a double resistor-capacitor parallel circuit model was used which allow for interpretation physical mechanisms responsible for such behavior. The impedance results were correlated with Raman spectroscopy measurements.

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“…Slightly shifted reflexes indicate on internal stress existing in diamond layer. In our case XRD spectra indicate on 220 preferred orientation as it was determined by texture coefficient T C (hkl) defined by the following formula [9,10]:…”

Section: Methodsmentioning

confidence: 99%

Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

et al. 2017

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The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ300), currentvoltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ300 and I−V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ300 ≈ 0.1−1 µS/cm. The I−V characteristics in these layers show space charge limited conduction behavior with I ∼ V 2 in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.

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Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films

Cited by 99 publications

References 28 publications

An enhanced gas ionization sensor from Y-doped vertically aligned conductive ZnO nanorods

An enhanced gas ionization sensor from Y-doped vertically aligned conductive ZnO nanorods

Impedance study of undoped, polycrystalline diamond layers obtained by HF CVD

Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD

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