Structural characteristics of m-plane AlN substrates and homoepitaxial films

Graziano, Milena B.; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Tweedie, James; Collazo, Ramón; Sitar, Zlatko

doi:10.1016/j.jcrysgro.2018.07.012

Cited by 5 publications

(4 citation statements)

References 38 publications

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“…Currently, AlN-based ultraviolet light-emitting diodes (UV-LED) are mainly grown on the polar (0001) plane, which has a strong spontaneous and piezoelectric polarization electric field, leading to a decrease in the luminous efficiency of the device [ 7 , 8 , 9 , 10 , 11 ]. In contrast, the semi-polar AlN, such as (10

3) and (11

2) planes, has a weak piezoelectric polarization field, which can effectively improve the performance of UV-LEDs [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Zhao

Liu

et al. 2021

Materials

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Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (101¯3) orientation AlN film, the quality of which shows strong dependence on the nitridation temperature. The full width at half maximum of X-ray diffraction for (101¯3) AlN film was only 0.343° at the optimum nitridation temperature of 1300 °C. It is found that the nano-holes were formed on the surface of substrates by the decomposition of sapphire in the process of high-temperature nitridation, which is closely related to the quality improvement of AlN. At the critical nitridation temperature of 1300 °C, the average size of the nano-holes is about 70 nm, which is in favor of promoting the rapid coalescence of AlN micro-grains in the early stages. However, the size of nano-holes will be enlarged with the further increase of nitridation temperature, which begins to play a negative role in the coalescence of AlN grains. As a result, the grain size will be increased and extended to the epilayer, leading to the deterioration of the AlN film.

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3) and (11

2) planes, has a weak piezoelectric polarization field, which can effectively improve the performance of UV-LEDs [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Zhao

Liu

et al. 2021

Materials

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“…Undulated or striated surfaces have been commonly observed in the conventional planar homoepitaxial growth of nonpolar m-plane GaN and AlN. [23][24][25][26][27][28][29] In such planar homoepitaxial growth, the undulations have been reduced by using miscut substrates in the case of GaN, 23,30,31 and by using a high growth temperature (41350 1C) in the case of AlN. 29,32 However, in the heteroepitaxy of m-plane AlGaN on GaN nanowire sidewalls, a preferential miscut is not defined for the nanowire sidewalls and the high temperature growth required in the case of AlN risks thermal decomposition of the GaN nanowires.…”

Section: Morphology With Carrier Gasmentioning

confidence: 99%

“…[23][24][25][26][27][28][29] In such planar homoepitaxial growth, the undulations have been reduced by using miscut substrates in the case of GaN, 23,30,31 and by using a high growth temperature (41350 1C) in the case of AlN. 29,32 However, in the heteroepitaxy of m-plane AlGaN on GaN nanowire sidewalls, a preferential miscut is not defined for the nanowire sidewalls and the high temperature growth required in the case of AlN risks thermal decomposition of the GaN nanowires. Nonetheless, a smooth sidewall surface of nonpolar m-plane AlGaN is a prerequisite for obtaining a sharp interface if the radial heterostructures are to be implemented in practical applications.…”

Section: Morphology With Carrier Gasmentioning

confidence: 99%

Core–shell GaN/AlGaN nanowires grown by selective area epitaxy

et al. 2023

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“…For the growth of the Al x Ga 1-x N epilayer, a high-quality c-plane AlN seed prepared from spiral center growth mode was sliced and polished with a mean surface roughness (R a ) of ~0.097 nm. Then the Al x Ga 1-x N layer was deposited applying the MOCVD method by flowing TMA and TMG as Al and Ga sources as our previous work reported [17] .…”

Section: Experimental Processmentioning

confidence: 99%

Morphology and crystalline property of an AlN single crystal grown on AlN seed

Zhang¹,

Qi²,

Cheng³

et al. 2021

J. Semicond.

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AlN single crystal grown by physical vapor transport (PVT) using homogeneous seed is considered as the most promising approach to obtain high-quality AlN boule. In this work, the morphology of AlN single crystals grown under different modes (3D islands and single spiral center) were investigated. It is proved that, within an optimized thermal distribution chamber system, the surface temperature of AlN seed plays an important role in crystal growth, revealing a direct relationship between growth mode and growth condition. Notably, a high-quality AlN crystal, with (002) and (102) reflection peaks of 65 and 36 arcsec at full width at half maximum (FWHM), was obtained grown under a single spiral center mode. And on which, a high-quality Al x Ga1– x N epitaxial layer with high Al content (x = 0.54) was also obtained. The FWHMs of (002) and (102) reflection of Al x Ga1– x N were 202 and 496 arcsec, respectively, which shows superiority over their counterpart grown on SiC or a sapphire substrate.

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Structural characteristics of m-plane AlN substrates and homoepitaxial films

Cited by 5 publications

References 38 publications

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Core–shell GaN/AlGaN nanowires grown by selective area epitaxy

Morphology and crystalline property of an AlN single crystal grown on AlN seed

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