Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

Tong, Xiaofeng; Zheng, Qi; Hu, Shouxing; Qin, Y.X.; Ding, Zhi

doi:10.1007/s00339-003-2106-8

Cited by 30 publications

(11 citation statements)

References 20 publications

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“…The electrical resistivity of sample D was the largest, while that of sample A was the smallest. The electrical resistivity correlates with defect density, and the high defect density in the films may cause a decrease in the electrical resistivity [30]. The values of electrical resistivity of samples C and D were very close, which is consistent with the structural features of the films grown on these substrates, as discussed above.…”

Section: Resultssupporting

confidence: 83%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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Approximately 4-µm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate's surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 • C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga-Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices.

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Section: Resultssupporting

confidence: 83%

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

et al. 2017

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“…The details of the deposition chamber have been described previously [9]. In a typical experiment, the deposition was carried out in a stainless steel vacuum chamber evacuated by a turbomolecular pump to a base pressure of 10 − 3 Pa. A femtosecond pulsed Ti:Sapphire laser was used for the experiments.…”

Section: Methodsmentioning

confidence: 99%

“…For example, the target ablated by laser can create a highly energetic growth precursor, leading to nonequilibrium growth conditions. Therefore, high-quality films can be obtained [9]. PLD has become an appealing growth technique for CdS thin films.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization of CdS thin film on quartz formed by femtosecond pulsed laser deposition at high temperature

et al. 2008

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“…This may be due to the larger mobility and diffusion of adatom on the surface of the ITO substrate. Tong et al reported that the surface roughness is related to the mobility and diffusion of the adatom on substrate surface (Tong et al, ). The larger RMS area roughness of the ZnO films prepared on ITO indicates that it is favorable for application in sensor devices.…”

Section: Resultsmentioning

confidence: 99%

The role of substrates on the structural, optical, and morphological properties of zno nanotubes prepared by spray pyrolysis

Vijayalakshmi¹,

Karthick²

2013

Microsc. Res. Tech.

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ZnO films were deposited onto glass, ITO coated glass, and sapphire substrate by spray pyrolysis, and subsequently annealed at the same temperature of 400°C for 3 h. The role of substrate on the properties of ZnO films was investigated. The structural and optical properties of the films were investigated by X-ray diffractometer (XRD) and photoluminescence (PL) spectrophotometer, respectively. The surface morphology of the nanostructured ZnO film was investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Crystallographic properties revealed that the ZnO films deposited on sapphire and ITO substrates exhibit a strong c-axis orientation of grains with hexagonal wurtzite structure. Extremely high UV emission intensity was determined in the film on ITO. The different luminescence behaviors was discussed, which would be caused by least value of strain in the film. Films grown on different substrates revealed differences in the morphology. ZnO films on ITO and sapphire substrates revealed better morphology than that of the film on glass. AFM images of the films prepared on ITO show uniform distribution of grains with large surface roughness, suitable for application in dye sensitized solar cells.

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Structural characterization and optoelectronic properties of GaN thin films on Si(111) substrates using pulsed laser deposition assisted by gas discharge

Cited by 30 publications

References 20 publications

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

Structural characterization of CdS thin film on quartz formed by femtosecond pulsed laser deposition at high temperature

The role of substrates on the structural, optical, and morphological properties of zno nanotubes prepared by spray pyrolysis

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