Electron beam microscopy and related characterization techniques play an important role in revealing the microstructural, morphological, physical, and chemical information of halide perovskites and their impact on associated optoelectronic devices. However, electron beam irradiation usually causes damage to these beam-sensitive materials, negatively impacting their device performance, and complicating this interpretation. In this article, the electron microscopy and spectroscopy techniques are reviewed that are crucial for the understanding of the crystallization and microstructure of halide perovskites (e.g. MAPbI 3 , CsPbBr 3 ). In addition, special attention is paid to assessing and mitigating the electron beam-induced damage caused by these techniques during measurements of both organic-inorganic hybrid and all-inorganic halide perovskites. Since the halide perovskites are fragile, a protocol involving delicate control of both electron beam dose and dose rate, coupled with careful data analysis, is shown to be the key to enable the acquisition of reliable structural and compositional information such as atomic-resolution images, chemical elemental mapping and electron diffraction patterns. Limiting the electron beam dose is shown to be the critical parameter enabling the characterization of various halide perovskite materials. Novel methods to unveil the mechanisms of device operation, including charge carrier generation, diffusion, and extraction are presented in scanning electron microscopy studies combined with electron-beam induced current and cathodoluminescence mapping. Future opportunities for electron-beam related characterizations of halide perovskites are also discussed.