Structural characterization of CuIn 2 Se 3.5 , CuIn 3 Se 5 and CuIn 5 Se 8 compounds

Merino, J. M.; Mahanty, Sourindra; León, M.; Dı́az, R.; Rueda, F.; Vidales, J. L. Martı́n de

doi:10.1016/s0040-6090(99)00771-3

Cited by 65 publications

(42 citation statements)

References 16 publications

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“…In Fig. 4, it is clearly visible that with increasing copper concentration all characteristic peaks of Cu(In,Ga)Se 2 are shifted to lower angles, This shift indicates an increase of the CIGSe lattice parameters which can be correlated to the incorporation of copper [6].…”

Section: Contributed Articlementioning

confidence: 86%

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films

Hesse

Kamdoum

Caballero

et al. 2009

Phys. Status Solidi (c)

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In the present work, the effect of the copper incorporation into the In‐Ga‐Se precursor layer during the stage 2 of the three stage growth process of Cu(InGa)Se2 thin films is investigated. Break‐off experiments at certain points during stage 2 were performed, corresponding to different [Cu]/([Cu]+[In]+[Ga]) ratios. The elemental distribution in the layers at the break‐off points was investigated by energy‐dispersive X‐ray spectroscopy on cross‐sections of the layers. Although stage 1 includes a sequential deposition of In‐Se and Ga‐Se layers, these layers appear completely mixed in the beginning of stage 2, i.e., compositional gradients are absent, after the deposition of copper and selenium at a substrate temperature of 525 °C during this stage. However, the deposition of copper and selenium at lower substrate temperatures and for short deposition durations, leading to [Cu]/([Cu]+[In]+[Ga]) ratios much smaller than 0.5, results in thin films in which the sequential order of the precursor layers remains clearly visible in the EDX profiles. Grazing incidence X‐ray diffraction measurements were carried out to investigate the formation of different phases, e.g., that of ordered vacancy compounds, during the incorporation of copper into the In‐Ga‐Se precursor layers. The influence of the copper incorporation on the Cu(In,Ga)Se2 lattice parameter is discussed. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 86%

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films

Hesse

Kamdoum

Caballero

et al. 2009

Phys. Status Solidi (c)

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“…The analysis of X-ray powder diffraction data [5][6][7] confirmed that CuIn 3 Se 5 crystallizes in a tetragonal unit cell corresponding to a chalcopyrite-related structure, space group P42c [5,7]. The obtained unit cell parameters a and c are 5.7541(5) and 11.538(3) A, respectively.…”

Section: Chemical Composition and X-ray Diffraction Analysismentioning

confidence: 87%

“…Another ternary compound formed on the In-rich side of the pseudo-binary phase diagram of Cu 2 SeIn 2 Se 3 is CuIn 3 Se 5 [3,4]. This material, which crystallizes in a chalcopyrite-related structure [5][6][7], is found to segregate as a secondary phase on the surface of In-rich CuInSe 2 thin films [8,9]. Since high efficiency solar cells can be prepared by p-n junction between p-type CuInSe 2 and n-type CuIn 3 Se 5 [10], it is expected that CuIn 3 Se 5 could play an important role in the optimization of solar cells based on CuInSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of the Ordered Defect Compound CuIn3Se5

Wasim

Rincón

Marín

2002

phys. stat. sol. (a)

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The electrical properties of n and p‐type bulk samples of CuIn3Se5 have been studied in the temperature range from 80 to 300 K. From the analysis of the temperature dependence of electron and hole concentrations in the activation regime above 110 K, the activation energy and the density of states effective mass of the charge carriers are estimated to be 36 meV and 0.13me for n‐type samples, and 28 meV and 1.07me for p‐type samples, respectively. The relatively low value of the carrier concentration in n‐CuIn3Se5 and the value in p‐CuIn3Se5 being of the same magnitude as in CuInSe2 confirms that this compound is formed due to the presence of ordered arrays of electrically inactive donor–acceptor defect pairs (2 VCu1— + InCu2+). Below 110 K, the electrical conduction in the impurity band is due to nearest neighbor hopping mechanism. The relatively low magnitude of the electron mobility and its temperature dependence in the activation regime is explained by considering, in addition to the well‐established scattering processes, a mechanism that involves the scattering of the charge carriers by ordered arrays of donor–acceptor defect pairs. At lower temperatures, the variation of the mobility is explained by taking into account the theoretical model for the thermally activated nearest neighbor hopping of the charge carriers between localized states in the impurity band.

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“…CZTGS thin films were fabricated by a sequential, or twostage, process: evaporation followed by a thermal treatment. In the first stage, CZTGS thin films were deposited by flash evaporation [18] onto Mo coated glass and glass substrates using the compound in powder form at nominal substrate temperatures, T substr of 100º and 350º C. As previously reported [19], a preferential re-evaporation of Zn takes place during the flash evaporation process, leading to Zn-poor thin films. It was reported that, despite a Zn-rich precursor powder, a significantly decreased Zn-content was obtained after evaporation.…”

Section: Methodsmentioning

confidence: 99%

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

Caballero

Cano-Torres

Garcia-Llamas

et al. 2015

Solar Energy Materials and Solar Cells

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El acceso a la versión del editor puede requerir la suscripción del recurso Access to the published version may require subscription On the other hand, it is still necessary to understand the role of the growth parameters to produce kesterite material with the optimum properties for maximum device efficiency. fabricated by a sequential, or two-stage, process: deposition of precursor followed by post-sulfurization/selenization. This is advantageous due to its capability and high throughput. However, it is also desirable to reduce the number of stages during the growth process.

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Structural characterization of CuIn 2 Se 3.5 , CuIn 3 Se 5 and CuIn 5 Se 8 compounds

Cited by 65 publications

References 16 publications

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films

Electrical Properties of the Ordered Defect Compound CuIn3Se5

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

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Structural characterization of CuIn 2 Se 3.5 , CuIn 3 Se 5 and CuIn 5 Se 8 compounds

Cited by 65 publications

References 16 publications

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se2 thin films

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se2 thin films

Electrical Properties of the Ordered Defect Compound CuIn3Se5

Towards the growth of Cu 2 ZnSn 1−x Ge x S 4 thin films by a single-stage process: Effect of substrate temperature and composition

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Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films

Structural investigations of copper incorporation into In‐Ga‐Se precursor layers for Cu(In,Ga)Se₂ thin films