Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

Baladés, N.; Herrera, M.; Sales, D.; Delgado, Francisco; Hernández-Maldonado, David; Ramasse, Quentin M.; Pizarro, J.; Galindo, Pedro L.; González, M.; Abell, J.; Tomasulo, Stephanie; Walters, Joshua R.; Molina, S. I.

doi:10.1016/j.apsusc.2016.07.094

Cited by 6 publications

(11 citation statements)

References 26 publications

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“…Baladés et al . () did not find significant intensity fluctuations in the atomic columns faraway from those found in the InP substrate. The authors attribute this to a possible averaging of 3D small composition fluctuations through the foil thickness in specimens prepared following the classical procedure.…”

Section: Introductionmentioning

confidence: 73%

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Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials

Baladés

Herrera

Sales

et al. 2018

Journal of Microscopy

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Summary The influence of the neighbouring atomic‐columns in determining the composition at atomic column scale of quaternary semiconductor compounds, using simulated HAADF‐STEM images is evaluated. The InAlAsSb alloy, a promising material in the photovoltaic field, is considered. We find that the so called ‘crosstalk’ effect plays an important role for the aimed compositional determination. The intensity transfer is larger from neighbouring atomic columns with higher average Z, and towards atomic columns with smaller Z. Our results show that in order to obtain precise information on the column composition, the HAADF‐STEM intensities of both columns need to be taken into account simultaneously.

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Section: Introductionmentioning

confidence: 73%

“…, ; Baladés et al. , ). Each model is considered as a continuous supercell of 23 × 17 unit cells, with dimensions 10 × 10 nm along [110] and [001] axis, respectively.…”

Section: Simulation Detailsmentioning

confidence: 97%

Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials

Baladés

Herrera

Sales

et al. 2018

Journal of Microscopy

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“…Furthermore, micrographs taken in [220] bright field conditions depicted the existence of strain fluctuations in the buffer layer, related to compositional modulation for all studied growth conditions. Aberration corrected scanning transmission electron microscopy (STEM) 5 studies showed the possibility of short range compositional fluctuation in quaternary layers [4]. Non-random growth in InAlAsSb heterostructures lattice-matched to InAs has been reported previously [5].…”

Section: Introductionmentioning

confidence: 94%

“…III-V multijunction solar cells have held record efficiency for the past few decades, with a current highest value of 46% for a mechanically stacked 4 junction (4J) 3 device under concentrated terrestrial sunlight [1]. When grown monolithically, the record efficiency is 45.7%, also for a 4 J inverted metamorphic (IMM) 4 III-V solar cell grown on GaAs substrates [1]. In this method, some of the layers are grown under mismatch conditions to better match the ideal bandgap for solar energy conversion.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the compositional modulation of InAlAsSb

Baladés

Sales

Herrera

et al. 2017

Applied Surface Science

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The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM). 1 This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL) 2 measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.

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“…In that study, the InAlAsSb grown lattice-matched to InP exhibited narrower bandgaps than those predicted, with photoluminescence indicating the presence of both type II band alignment and carrier confinement. While secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) confirmed that the bulk composition and lattice-matching were within measurement error of the target values [1], [2], transmission electron microscopy (TEM) and atom probe tomography (APT) indicated the existence of cluster features most likely on a scale of tens of angstroms [3], [4], [5], [6], [7].…”

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confidence: 99%

Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography

et al. 2018

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Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells

Cited by 6 publications

References 26 publications

Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials

Influence of the crosstalk on the intensity of HAADF‐STEM images of quaternary semiconductor materials

Effect of annealing on the compositional modulation of InAlAsSb

Evaluating Compositional Variation in InGaAs Random Alloys Using Atom Probe Tomography

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