2017
DOI: 10.1088/1674-1056/26/11/116801
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Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing

Abstract: InGaN layers capped with GaN were annealed at 550 • C for 1 hour. During annealing, cracks appeared and dissolved InGaN penetrated through the microcracks into the V-pits to form indium-rich nanoprecipitates. Some precipitates, in-situ annealed under nitrogen ion irradiation by MBE, were confirmed to be cubic GaN on the tops of precipitates, formed by nitriding the pre-existing Ga droplets under nitrogen ions irradiation.

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