Structural characterization of Mn implanted AlInN

Abstract

AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 °C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 °C and 850 °C, respectively. Strong decomposition of the samples took place when annealed at 850 °C.

Structural modifications of GaN after cerium implantation

“…It is known that implantation and substitution of large ionic sized rare earth atoms on cationic lattice sites produce strain. Many groups reported decrease of strain at certain implantation dose while studying the dose dependence of strain . We assign strain relaxation to increase in substitutional efficiency of dopants on Ga sites in the implanted regions of the samples.…”

Neon and Manganese Ion Implantation into AlInN

“…Mn implanted AlInN thin films were characterized by X-ray diffraction, Rutherford backscattering spectroscopy and superconducting quantum interference device magnetometer to study the structural and magnetic properties of material [70,71]. The experimental results obtained from such measurements are described in the following sections.…”

Experimental and computational analysis of transition metal ion-doped AlInN/GaN thin films

“…The depth proles and luminescence properties of Eu and Er ion-implanted AlInN/GaN bilayers were studied using time-of-ight secondary ion mass spectrometry by Martin et al 11 Wang et al reported cathodoluminescence studies of rareearth-implanted AlInN and suggested AlInN as a robust host for rare earth ions. 12 The structural modications induced by neon ion 13 and Mn ion 14 implantation in AlInN/GaN were reported by A. Majid et al The initial investigations on AlInNbased diluted magnetic semiconductors (DMS) realized by Mn doping were reported by A. Majid et al 15,16 The implantation of transition metal (TM) ions and rare earth ions into semiconductors is an attractive research area because the resulting ferromagnetic DMS materials are potential candidates for spintronic devices. 17 Unlike AlInN, there have been a reasonable number of studies reporting DMSs based on the implantation of TM ions into nitride binary materials and also into other ternary materials.…”