Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

Anjos, Alexandre Miranda P. dos; Dói, I.; Diniz, J. A.

doi:10.1016/j.apsusc.2008.02.119

Cited by 3 publications

(3 citation statements)

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“…The 1.53 atomic percentage excess of Ge found in the sample is due in fact to an increase of the Ge concentration at the surface subsequent to the RTA annealing. This result is in agreement with literature reports (11), where the composition of Ge is found to increase after RTA annealing. [100]…”

Section: Resultssupporting

confidence: 94%

Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics

2011

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Epitaxial Si1-xGex ultra-thin films deposited on the surface of silicon (001) using Ultra High Vacuum- Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) technique have been investigated using several nanoscale characterization techniques such as Atomic Force microscopy (AFM), Confocal Raman Spectroscopy, Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), and EDX. Results indicate a non-planar growth surface with the formation of various nanostructures and pits. Interfacial elastic strain energy due to lattice constant mismatch is relieved through a change in the surface morphology. This is done through the formation of 3D-islands and pits on localized strain. The islands are 3-faceted truncated pyramids with the truncated face parallel to (001). In the present work we are focusing on the characterization of the Si1-xGex/Si(001) surface morphology change during growth and thermal annealing to delineate the formation mechanisms of nano-dots at the surface of such thin film material system.

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Section: Resultssupporting

confidence: 94%

Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics

2011

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“…Based on GIXRR x Ge values two hypothesis for nanocluster dynamic with the annealing time can be appointed: 1) The x Ge in nanocluster increase due the Ge incorporation from the amorphous structure or 2) The x Ge in nanocluster increase due the Si extraction from the nanoclusters. The second hypothesis is supported by the nanocluster diminishing according to annealing time reported in a previous work [23] calculated from GIXRR measurements. The average grain size calculated from GIXRR measurements varied from 3.5 nm to 7.5 nm with the annealing time.…”

Section: Resultssupporting

confidence: 57%

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Anjos

Dói

Diniz

2009

e-J. Surf. Sci. Nanotechnol.

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This work presents the micro-Raman (µR) analysis in SiGe nanoclusters formed by rapid thermal annealing (RTA). Heterostructure of a-Si:H/Ge/a-Si:H was grown on p-Si (001) substrate by Electron Cyclotron Resonance ECR plasma deposition and e-beam technique. Different parts of the sample were heated at 1000• C during 40, 50, 60 and 70 seconds. The samples as-deposited and RTA processed were characterized by Raman measurements in order to evaluate the Ge concentration and strain for different annealing times. The same parameters were extracted from high-resolution x-ray diffraction (HRXRD) performed in grazing incidence x-ray reflection mode (GIXRR). The µR spectra were sensitive to film strain changes due to the Ge diffusion during RTA process. The association of both characterization techniques provides information about some features of the SiGe nanoclusters at different annealing times. The results show the potential micro-Raman applicability for SiGe nanoclusters embedded in amorphous structure characterization.

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“…Several techniques such as Ion Beam Sputtering Deposition [24], Rapid Thermal Annealing [25], Chemical Vapor Deposition [26] and RF Magnetron Sputtering [27] are being extensively studied to fabricate high-quality SiGe nanoislands. Among them, MBE has many advantages compared to other techniques in the growth of more uniform large area thin films, formation of dense structure with higher crystalline quality and the ease of controlled and repeatable fabrication of epitaxial SiGe layers.…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical investigations of MBE-grown SiGe nanoislands

et al. 2017

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SiGe nanoislands were grown by Molecular Beam Epitaxy (MBE) method on Si (100) substrates with comparative growth parameters such as annealing temperature, top Ge content and layer-by-layer annealing (LBLA). XRD and Raman data suggest that annealing temperature, top Ge content and layer-by-layer annealing (LBLA) can overall give a control not only over the amorphous content but also over yielding the strained Ge layer formation in addition to mostly Ge crystallites. Depending on the layer design and growth conditions, size of the crystallites was observed to be changed. Four Point Probe (FPP) Method via Semiconductor Analyzer shows that 100 °C rise in annealing temperature of the samples with Si 0.25 Ge 0.75 top layers caused rougher islands with vacancies which further resulted in the formation of laterally higher resistive thin film sheets. However, vertically performed I-AFM analysis produced higher I-V values which suggest that the vertical and horizantal conductance mechanisms appear to be different. Ge top-layered samples gained greater crystalline structure and better surface conductivity where LBLA resulted in the formation of Ge nucleation and tight 2D stacking resulting in enhanced current values.

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Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

Cited by 3 publications

References 13 publications

Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics

Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Structural and electrical investigations of MBE-grown SiGe nanoislands

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Structural characterization of SiGe nanoclusters formed by rapid thermal annealing

Cited by 3 publications

References 13 publications

Strain Induced Nano-Structured Si1-XGeX Grown on Silicon by UHV-RTCVD for Photovoltaics

Strain Induced Nano-Structured Si1-XGeX Grown on Silicon by UHV-RTCVD for Photovoltaics

Raman Characterization of SiGe Nanostructures Formed by Rapid Thermal Annealing

Structural and electrical investigations of MBE-grown SiGe nanoislands

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Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics

Strain Induced Nano-Structured Si_1-XGe_X Grown on Silicon by UHV-RTCVD for Photovoltaics