Structural characterization of the ternary compound Cu3TaSe4

Delgado, Gerzon E.; Mora, Asiloé J.; Durán, S.; Muñoz, M.; Grima‐Gallardo, P.

doi:10.1016/j.jallcom.2006.08.232

Cited by 34 publications

(26 citation statements)

References 22 publications

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“…Initial positional parameters were taken from those of Cu 3 TaSe 4 [13] and unit cell parameters were those yielded by the NBS*AIDS. The angular dependence of the peak full width at half maximum (FWHM) was described by Caglioti's formula.…”

Section: Resultsmentioning

confidence: 99%

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Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

et al. 2011

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The ternary compound Cu 3 TaS 4 has been investigated by means of X-ray powder diffraction and its structure has been refined by the Rietveld method. This compound is isostructural with the sulvanite mineral Cu 3 VS 4 , and crystallizes in the cubic P43m space group (No. 215), Z = 1, with unit cell parameters a = 5.5145(1) Å and V = 167.70(1) Å 3 . The refinement of 14 instrumental and structural parameters converged to R p = 4.4%, R wp = 6.8%, R exp = 5.5% and S = 1.2 for 4501 step intensities and 33 independent reflections.

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Section: Resultsmentioning

confidence: 99%

“…The crystal structures of Cu 3 VS 4 [9], Cu 3 NbS 4 [10], Cu 3 VSe 4 [11], Cu 3 NbSe 4 [12], Cu 3 TaSe 4 [13], Cu 3 NbTe 4 [14] and Cu 3 TaTe 4 [15] have been previously established by means of X-ray diffractometry. For Cu 3 VTe 4 there is no structural data.…”

Section: Introductionmentioning

confidence: 99%

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

et al. 2011

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“…The single crystals of prismatic shapes and dimensions up to 1 × 1 × 3 mm 3 were used for the measurement of the refractive index, optical transmission, and electro‐optical effect, but not for X‐ray diffraction 1. A few years ago, the crystal structure of Cu 3 TaSe 4 has been reported on the basis of X‐ray powder diffraction 4. The latter work appears to be the only refinement of the crystal structure of Cu 3 TaSe 4 published up to the present date.…”

Section: Introductionmentioning

confidence: 41%

“…Sulvanite‐type compounds Cu 3 MX 4 ( M = V, Nb, Ta; X = S, Se, Te) are interesting materials due to their electronic structures and electro‐optical properties 1–3. The crystal structures of several of these compounds have been established by means of X‐ray diffraction 4–9. They are cubic with space group P $\bar{4}$ 3 m .…”

Section: Introductionmentioning

confidence: 99%

“…Herein we report the successful synthesis of single crystals of Cu 3 TaSe 4 . Single‐crystal X‐ray diffraction confirms the sulvanite structure type, but we find a small distortion out of the idealized crystal structure, which is of opposite sign than the distortion reported on the basis of X‐ray powder diffraction 4. We discuss distortions of Cu 3 MX 4 ( M = V, Nb, Ta; X = S, Se, Te) in relation to their chemical compositions.…”

Section: Introductionmentioning

confidence: 99%

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Carbon Nitride in Energy Conversion and Storage: Recent Advances and Future Prospects

2015

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With the explosive growth of energy consumption, the exploration of highly efficient energy conversion and storage devices becomes increasingly important. Fuel cells, supercapacitors, and lithium-ion batteries are among the most promising options. The innovation of these devices mainly resides in the development of high-performance electrode materials and catalysts. Graphitic carbon nitride (g-C3 N4 ), due to structural and chemical properties such as semiconductor optical properties, rich nitrogen content, and tunable porous structure, has drawn considerable attention and shown great potential as an electrode material or catalyst in energy conversion and storage devices. This review covers recent progress in g-C3 N4 -containing systems for fuel cells, electrocatalytic water splitting devices, supercapacitors, and lithium-ion batteries. The corresponding catalytic mechanisms and future research directions in these areas are also discussed.

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Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

Shin

Saparov

Mitzi

2017

Advanced Energy Materials

295

232

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IntroductionChalcogenide photovoltaic (PV) materials such as CdTe [1,2] and Cu(In,Ga)Se 2 (CIGSe) [3][4][5] have enabled remarkable progress in thin-film PV device performance, with each technology exceeding the 20% power conversion efficiency (PCE) barrier. However, two major concerns remain regarding these technologies-i.e., the negative environmental impacts of Cd Application of zinc-blende-related chalcogenide absorbers such as CdTe and Cu(In,Ga)Se 2 (CIGSe) has enabled remarkable advancement in laboratory-and commercial-scale thin-film photovoltaic performance; however concerns remain regarding the toxicity (CdTe) and scarcity (CIGSe/CdTe) of the constituent elements. Recently, kesterite-based Cu 2 ZnSn(S,Se) 4 (CZTSSe) materials have emerged as attractive non-toxic and earth-abundant absorber candidates. Despite the similarities between CZTSSe and CIGSe/CdTe, the record power conversion efficiency of CZTSSe solar cells (12.6%) remains significantly lower than that of CIGSe (22.6%) and CdTe (22.1%) devices, with the performance gap primarily being attributed to cationic disordering and associated band tailing. To capture the promise of kesterite-like materials as prospective "drop-in" earth-abundant replacements for closely-related CIGSe, current research has focused on several key directions to control disorder, including: (i) examination of the interaction between processing conditions and atomic site disorder, (ii) isoelectronic cation substitution to introduce ionic size mismatch, and (iii) structural diversification beyond the zinc-blendetype coordination environment. In this review, recent efforts targeting accurate identification and engineering of anti-site disorder in kesterite-based CZTSSe are considered. Lessons learned from CZTSSe are applied to other complex chalcogenide semiconductors, in an effort to develop promising pathways to avoid anti-site disordering and associated band tailing in future high-performance earth-abundant photovoltaic technologies.

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Structural characterization of the ternary compound Cu3TaSe4

Cited by 34 publications

References 22 publications

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

Carbon Nitride in Energy Conversion and Storage: Recent Advances and Future Prospects

Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

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Structural characterization of the ternary compound Cu3TaSe4

Cited by 34 publications

References 22 publications

Structure Refinement of the Semiconducting Compound Cu3TaS4from X-Ray Powder Diffraction Data

Structure Refinement of the Semiconducting Compound Cu3TaS4from X-Ray Powder Diffraction Data

Carbon Nitride in Energy Conversion and Storage: Recent Advances and Future Prospects

Defect Engineering in Multinary Earth‐Abundant Chalcogenide Photovoltaic Materials

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Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data

Structure Refinement of the Semiconducting Compound Cu₃TaS₄from X-Ray Powder Diffraction Data