Structural, chemical, and electrical parameters of Au/MoS2/n-GaAs metal/2D/3D hybrid heterojunction

Padma, R.; Lee, Gilho; Kang, Ju Young; Li, Junfu

doi:10.1016/j.jcis.2019.04.061

Cited by 19 publications

(7 citation statements)

References 53 publications

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“…MoS 2 NPs have exhibited excellent anti-wear, mechanical, and thermophysical properties among various types of nanoparticles. Their lubricity characteristics associate with the inherent structure namely the vast space and weak Van der Waals forces that lead them to move easily on each other [30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Viscosity, tribological and physicochemical features of ZnO and MoS2 diesel oil-based nanofluids: An experimental study

Mousavi

Heris

Estellé

2021

Fuel

117

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In this research, two different diesel oil-based nanofluids were prepared and the influence of temperature and nanoparticle content were examined on viscosity, tribological, and physicochemical features of diesel oil. The kinematic viscosity of samples was experimentally evaluated based on standard ASTM D445. The greatest viscosity increment was diagnosed at 0.7 wt.% and 100°C for both of the prepared nanofluids. The anti-friction behavior of the nanofluids was studied utilizing a pin-on-disc tribometer. The acquired outcomes revealed that ZnO and MoS 2 nanoparticles (NPs) could promote the tribological characteristics of pure diesel oil. By analyzing the friction coefficient values and line roughness of the wear surface (Ra), an optimal concentration of ZnO and MoS 2 nanoparticles (NPs) were found to be around 0.4 wt.% and 0.7 wt.%, respectively. The friction factor and pumping power were also measured at diverse content of nanoparticles and flow rates showing that the pumping power was enhanced by the incorporation of nanoparticles.

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Section: Introductionmentioning

confidence: 99%

Viscosity, tribological and physicochemical features of ZnO and MoS2 diesel oil-based nanofluids: An experimental study

Mousavi

Heris

Estellé

2021

Fuel

117

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“…The success of these proof-of-concept studies urges the need to investigate in detail the properties of MoS 2 /GaAs heterojunctions in order to further improve the device quality. 18 Particularly, the band alignment between the two materials is still not well established although it is of major importance for applications involving these 2D/3D semiconductor architectures.…”

mentioning

confidence: 99%

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS2/GaAs

Rojas-Lopez

Brant

Ramos

et al. 2021

Applied Physics Letters

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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS 2 with GaAs, it is possible to develop high quality photodetectors and solar cells. Here, we present a study of effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS 2 . We observe a decrease in an order of magnitude in the emission intensity of MoS 2 in all MoS 2 /GaAs heterojunctions, when compared to a control sample consisting of a MoS 2 monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrates, a dependence that we relate to the static charge exchange between MoS 2 and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of heterojunctions suggest type-I band alignments, so that excitons generated on the MoS 2 monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions, which play a central role in the understanding and further improvement of electronic devices.

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“…The combination of the optical and electronic properties of TMDs and GaAs as a substrate has already shown promising results for implementation of solar cells 7 , with a power conversion efficiency of up to 9.03%, and photodetectors 3,5,6,17 , with a detectivity of up to 1.9 × 10 14 Jones. The success of these proof-of-concept studies urges the need to investigate in detail the properties of MoS 2 /GaAs heterojunctions, in order to further improve device quality 18 . Particularly, the band alignment between the two materials is still not well established although it is of major importance for applications involving these 2D/3D semiconductor architectures.…”

mentioning

confidence: 99%

“…Most of the work done on MoS 2 /GaAs junctions so far employ n-doped GaAs 3,[5][6][7]18 . Nearly all of these works propose a type II band alignment for MoS 2 /n-GaAs.…”

mentioning

confidence: 99%

“…That is not in complete disagreement with our proposal, since the transition to type II alignments for the MoS 2 /n-GaAs junctions would only imply that the conduction band step is larger than the one we estimated, which is based in comparisons of the experimental data for the three types of MoS 2 /x-GaAs junction and the control sample. Furthermore, it is worth pointing out that the devices studied in these other works were built with MoS 2 produced by chemical vapour deposition (CVD) 6,7,18 , thermal decomposition 5 or solution processing 3,17 , while we used exfoliated ML-MoS 2 . That could be relevant since it is well known that the defects, and thus doping, of MoS 2 monolayers obtained through each method can be quite different.…”

mentioning

confidence: 99%

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Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs

Rojas-Lopez,

Brant,

Ramos

et al. 2021

Preprint

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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional threedimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS 2 with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS 2 . We observe a decrease of an order of magnitude in the emission intensity of MoS 2 in all MoS 2 /GaAs heterojunctions, when compared to a control sample consisting of a MoS 2 monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS 2 and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS 2 monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices.

show abstract

Structural, chemical, and electrical parameters of Au/MoS2/n-GaAs metal/2D/3D hybrid heterojunction

Cited by 19 publications

References 53 publications

Viscosity, tribological and physicochemical features of ZnO and MoS2 diesel oil-based nanofluids: An experimental study

Viscosity, tribological and physicochemical features of ZnO and MoS2 diesel oil-based nanofluids: An experimental study

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS2/GaAs

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs

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