Structural chemistry, magnetism and electrical properties of binary Gd silicides and Ho3Si4

Experimental investigation and thermodynamic modeling of the Gd–Si system

“…XRD and back-scatter images confirm that the phase with the AlB 2 structure has a composition of Gd 3 Si 5 not Gd 2 Si 3. Recently, Roger et al [7] reported the existence of compound Gd 3 Si 4 with the structure of Ho 3 Si 4 even though did not obtain a pure sample of this compound. This is contradict with our present XRD results shown in Fig.…”

“…The crystal structure of Gd 5 Si 3 is of the Mn 5 Si 3 hexagonal type [6]; the structure of Gd 5 Si 4 is of the Sm 5 Ge 4 orthorhombic type; and the structure of the GdSi is of the FeB orthorhombic type. Recently, a new compound Gd 3 Si 4 belonging to Ho 3 Si 4 type was reported by Roger et al [7] though they did not succeed to synthesize a pure sample of this compound. There is an agreement that GdSi 2 has vacancy on the Si site so that the more accurate formula is GdSi 2−x ; a composition close to GdSi 1.4 was estimated by Perri et al [8] based on chemical analyses, X-ray and density measurements but the homogeneity was uncertain.…”

The ternary RE–Si–B systems (RE=Dy, Ho, Er and Y) at 1270K: Solid state phase equilibria and magnetic properties of the solid solution REB2−xSix (RE=Dy and Ho)

“…The decrease of the unit cell volume after insertion of boron in RE 5 Si 3 is indicative of a somewhat stronger bonding between the interstitial boron and the surrounding rare-earth metal atoms. The crystal structures of the binary RE 5 Si 3 and ternary RE 5 Si 3 B x phases together with their physical properties will be the subject of a forthcoming paper [24]. The alloy REB 2−x Si x results from boron substitution by silicon in the diboride REB 2 .…”

“…Recently, we have published the isothermal sections of the ternary systems Gd-Si-B and Nd-Si-B at the higher temperature of 1270 K [3,4]. No ternary phases in the Nd-Si-B system were found with the exception of This paper deals with the isothermal section of the ternary RE-Si-B phase diagrams (RE = Dy, Ho, Er and Y) at 1270 K. Crystal structures of RE 5 Si 3 (Mn 5 Si 3 -type, RE = Dy, Ho and Y) and Dy 3 Si 4 (Ho 3 Si 4 -type) were reported recently or will appear soon in the literature [9,10]. The X-ray single crystal structures of the binary compounds RE 5 Si 4 (Sm 5 Ge 4 -or structurally related Gd 5 Si 4 -type, RE = Dy and Ho), DySi (FeB-type) and both modifications of HoSi, i.e.…”

Особенности электронной структуры и спектральных характеристик соединения Gd-=SUB=-5-=/SUB=-Si-=SUB=-3-=/SUB=-

“…В настоящей работе исследуются электронная струк-тура и оптические характеристики бинарного интер-металлида Gd 5 Si 3 , ряд магнитных, кинетических и структурных свойств которого представлены в рабо-тах [19,[22][23][24]. В них сообщается, что в температур-ном интервале ниже T N ≈ 75 K соединение находится в антиферромагнитной (АФМ) фазе, характеризуемой геликоидальным упорядочением спиновых моментов.…”