Structural, Compositional, Optical, and Electrical Properties of Solution-Grown Zn[sub x]Cd[sub 1−x]S Films

Kuhaimi, S. A. Al; Tulbah, Z.

doi:10.1149/1.1393177

Cited by 46 publications

(18 citation statements)

References 12 publications

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“…[7,11±13,16,23] As exemplified in Figure 8b, the optical band gap, E g , of Zn x Cd 1 ± x S films showed a quadratic dependence on zinc molar fraction x, [7,11,12,16,44] in agreement with both theoretical predictions, [44] and experimental data for Zn x Cd 1 ± x S coatings deposited by the sol±gel method [12] and CBD. [7,11] This E g dependence might result in applications of the obtained coatings in optoelectronic devices, since it enables controlled modifications of the luminescence emission color. [9,16] …”

Section: Film Deposition and Characterizationsupporting

confidence: 78%

“…Furthermore, (Zn,Cd)S systems display promising features for use in electroluminescent, photoluminescent, and photoconductive devices. [4,8,10±13] Since the applications of these materials as thin films rely on a careful control of their properties that, in turn, are strongly dependent on the adopted synthetic procedure, several techniques have been used for their preparation, including vacuum evaporation, [14±16] chemical bath deposition (CBD), [7,11,13,17] successive ionic layer adsorption and reaction (SILAR), [10,18,19] and sol±gel. [12] The growth of (Zn,Cd)S thin films by CVD has attracted increasing attention as a possible method for the production of optoelectronic devices under soft preparative conditions.…”

Section: Introductionmentioning

confidence: 99%

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CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

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Nanostructured Zn x Cd 1 ± x S (0 £ x £ 1) thin films were synthesized by CVD on SiO 2 substrates using M(Oi PrXan) 2 (M = Zn,Cd; Oi PrXan = S 2 COCH(CH 3 ) 2 ) as precursor compounds. The method of preparation used consisted in the sequential deposition of single-phase MS coatings (M = Zn,Cd) at 300 C in a N 2 flow, followed by ex-situ annealing in an inert atmosphere at various temperatures in the range 400±700 C. The obtained specimens were thoroughly characterized before and after thermal treatments, paying particular attention to their structure, composition, morphology, and optical properties. Annealing in N 2 at 600 C for 3 h resulted in the formation of a homogeneous Zn x Cd 1 ± x S solid solution. Lower temperatures did not produce a uniform sample composition, while more severe annealing conditions induced CdS sublimation. Moreover, a compositional control of the Zn x Cd 1 ± x S ternary phase could be achieved by varying the ZnS overlayer deposition time.Irrespective of the annealing conditions, all the obtained films were contaminant-free and nanophasic (AE »25 nm), and possessed a hexagonal crystal structure the lattice parameters of which decreased linearly with increasing zinc molar fraction. A parallel evolution of optical absorption spectra was also observed. In the present paper, the interrelations between film properties and processing conditions are investigated, focusing particularly on the (Zn,Cd)S evolution to Zn x Cd 1 ± x S solid solutions.

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Section: Film Deposition and Characterizationsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

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“…linearly dependent on the zinc content [64,65]. The electrical resistivity of CdS films decreases with film thickness [66] and decreases to 10 5 X cm as the temperature is increased (200-400°C) [67].…”

Section: Resultsmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

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Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

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“…In solar cells, where CdS films have been demonstrated to be effective, the replacement of CdS with the higher band gap ternary CdZnS has led to a decrease in window absorption losses, and has resulted in an increase in the short circuit current in the solar cell. The adherent, specular, and stoichiometric Zn x Cd 1Àx S thin films were deposited on glass substrate by Kuhaimi and Tulbah [197]. Lee et al [198,199] and Gaewdang and Gaewdang [200] studied the effect of CdZnS film thickness and the annealing temperature on structural, optical and electrical properties.…”

Section: Cadmium Zinc Sulphide (Cdzns)mentioning

confidence: 99%