Structural damage in InGaN induced by MeV heavy ion irradiation

Zhang, L.M.; Fadanelli, R. C.; Hu, Peipei; Zhao, Jiangtao; Wang, T.S.; Zhang, C.H.

doi:10.1016/j.nimb.2015.04.065

Cited by 11 publications

(14 citation statements)

References 16 publications

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“…This is a powerful tool to analyze the structural defects in few-micrometer surface layers [13]. In past decades, the RBS/C technique has proven to be extremely valuable for studying radiation damage in crystalline materials induced by ion irradiation [14][15][16][17]. Interpretation of experimental RBS/C spectra is not, however, straightforward, and understanding of atomic structures underlying the RBS/C signals is still a challenge.…”

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confidence: 99%

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

Zhang

Nordlund

Djurabekova

et al. 2017

Materials Research Letters

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We develop a new method using binary collision approximation simulating the Rutherford backscattering spectrometry in channeling conditions (RBS/C) from molecular dynamics atom coordinates of irradiated cells. The approach allows comparing experimental and simulated RBS/C signals as a function of depth without fitting parameters. The simulated RBS/C spectra of irradiated Ni and concentrated solid solution alloys (CSAs, NiFe and NiCoCr) show a good agreement with the experimental results. The good agreement indicates the damage evolution under damage overlap conditions in Ni and CSAs at room temperature is dominated by defect recombination and migration induced by irradiation rather than activated thermally. IMPACT STATEMENT • A new method simulating the Rutherford backscattering Spectrometry in channeling conditions (RBS/C) was proposed. • The RBS/C simulations reveal that the radiation damage buildup in Ni, NiFe and NiCoCr was dominated by athermal defect reactions.

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mentioning

confidence: 99%

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

Zhang

Nordlund

Djurabekova

et al. 2017

Materials Research Letters

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“…The consistency between the two ratio values suggests that lattice structure within the ion tracks in In 0.18 Ga 0.82 N is likely to be highly disordered or fully amorphized. In our recent study [11] The detailed calculation of the relative In disorder can be referred to Ref. [11].…”

Section: Ion Track and Structurementioning

confidence: 99%

“…In our recent study [11] The detailed calculation of the relative In disorder can be referred to Ref. [11]. In fact,…”

Section: Ion Track and Structurementioning

confidence: 99%

“…The ion-beam-induced radiation damage in InGaN has been investigated worldwide over the past two decades [3][4][5][6][7][8][9][10][11][12]. For heavy-ion irradiation with ion energies ranging from several hundred keV to several MeV, the radiation resistance of In x Ga 1-x N (0≤x≤1) to structural amorphization has been found to dramatically decrease with increasing In content x [7][8][9][10][11][12]. In general, energetic ion induced atomic collision cascades are responsible for defect production and accumulation in crystals, while the simultaneous electronic processes involving heat production from electron-phonon coupling can contribute to defect recovery.…”

Section: Introductionmentioning

confidence: 99%

“…The point defects are distributed homogeneously over the irradiated film and accumulate gradually with increasing ion fluence to form more complex defects (e.g., planar defect clusters), until full amorphization of the film occurs. Significant lattice expansion of the film can be induced by accumulation of point defects, such as interstitials[11]. However, for 290 MeV U ion irradiation, highly disordered or fully amorphized ion tracks could be produced directly in the film.…”

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confidence: 99%

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Microstructural response of InGaN to swift heavy ion irradiation

Zhang

Jiang

Fadanelli

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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A monocrystalline In 0.18 Ga 0.82 N film of ~275 nm in thickness grown on a GaN/Al 2 O 3 substrate was irradiated with 290 MeV 238 U 32+ ions to a fluence of 1.2×10 12 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18 Ga 0.82 N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18 Ga 0.82 N is ~9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In 0.18 Ga 0.82 N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In 0.18 Ga 0.82 N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed by HRXRD.

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Ion Implantation in Group III Nitrides ☆

Pearton

2017

Reference Module in Materials Science and Materials Engineering

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Structural damage in InGaN induced by MeV heavy ion irradiation

Cited by 11 publications

References 16 publications

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

Microstructural response of InGaN to swift heavy ion irradiation

Ion Implantation in Group III Nitrides ☆

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