Structural defects in bulk and epitaxial CdTe

Durose, K.; Turnbull, A. G.; Brown, Paul D.

doi:10.1016/0921-5107(93)90022-f

Cited by 25 publications

(5 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the high tendency of Cd 1-x Mn x Te to form twins prevented the growth of low defect crystals for practical applications. The twin boundaries are sites where precipitates and inclusions concentrate [9], which could result in high leakage current along these regions, so as to negative affect the fabrication of Cd 1-x Mn x Te devices.…”

Section: Introductionmentioning

confidence: 99%

Twins in CdMnTe single crystals grown by Bridgman method

Zhang¹,

Wang

et al. 2009

Cryst. Res. Technol.

View full text Add to dashboard Cite

Cd 1-x Mn x Te (x=0.2, CdMnTe) crystal was grown by the vertical Bridgman method, which exhibits a pure zincblende structure in the whole ingot. The major defect, twins, which is fatal to CdMnTe crystal, was analyzed with scanning electron microscopy (SEM), X-ray energy disperse spectroscopy (XEDS) and optic microscopy on the chemical etching surface. The twins observed in the as-grown ingot are mainly lamellar ones, which lie on the {111} faces from the first-to-freeze region of the ingot and run parallel to the growth axis of the ingot. Coherent twins with {115} t -{111} h orientations when indexed with respect to both the twin and host orientations, are often found to be terminated by {110} t -{114} h lateral twins. Te inclusions with about 20 µm in width are observed to preferentially decorate the lamellar twin boundaries. The origin of the twins, relating to the growth twin and the phase transformation twin, is also discussed in this paper.

show abstract

Section: Introductionmentioning

confidence: 99%

Twins in CdMnTe single crystals grown by Bridgman method

Zhang¹,

Wang

et al. 2009

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…Therefore, GaAs wafers of various orientations, including (0 0 1), (1 1 1)A and (2 1 1)B, were used in the experiments described here. It is interesting to use the GaAs(1 1 1)A substrate because slip planes and Burger's vectors lie in {1 1 1} [11], the growth interface may be kept to (1 1 1) when the film becomes thick.…”

Section: Introductionmentioning

confidence: 99%

Hetero-epitaxial crystal growth of CdTe on GaAs substrates

Jiang

Mullins²,

Toman

et al. 2008

Journal of Crystal Growth

View full text Add to dashboard Cite

“…The diffracted intensity in the tail of the SiGe layer is not symmetric with intensity broadening toward the positive ω angle (see Figure 2a). This is assumed due to the formation of MDs at the lower interface of the SiGe layer, which induces the increase in the maximum angular tilt between the mosaic blocks during relaxation process (19). The elongation of the SiGe (004) peak along the 2θ/ω scan direction (see Figure 2a) suggests that the strain variation is a dominant effect over the mosaicity.…”

Section: Resultsmentioning

confidence: 99%

X-Ray Reciprocal Space Mapping and Synchrotron Radiation Topography of Strained Si/Si1-xGex on Bonded SOI

et al. 2006

ECS Trans.

View full text Add to dashboard Cite

In this work, X-ray triple-axis diffractometry (TAD) and synchrotron radiation double-crystal topography (SRDT) have been utilized to investigate strained-Si/Si1-xGex on bonded SOI. The structural characteristics of the Si capping layer and the underlying Si layers (the Si buffer and SOI top Si layer) have been described using high resolution reciprocal lattice mapping (HRRLM). The mosaicity in the SiGe layer leads to (004) diffraction peak broadening asymmetrically. The crosshatched contrast spatially correlated with the misfit dislocations (MDs) has been observed both in the SiGe layer and the underlying Si layers. The granular pattern due to the mosaic blocks is also shown in the topograph of the SiGe layer. It is argued that the compressive strain in the SiGe layer has been primarily released at the interface between the SiGe layer and the underlying Si layers.

show abstract

Structural defects in bulk and epitaxial CdTe

Cited by 25 publications

References 16 publications

Twins in CdMnTe single crystals grown by Bridgman method

Twins in CdMnTe single crystals grown by Bridgman method

Hetero-epitaxial crystal growth of CdTe on GaAs substrates

X-Ray Reciprocal Space Mapping and Synchrotron Radiation Topography of Strained Si/Si1-xGex on Bonded SOI

Contact Info

Product

Resources

About