Structural Defects Modulate Electronic and Nanomechanical Properties of 2D Materials

Lee, Frank; Michail, Antonios; Anestopoulos, Dimitris; McHugh, James G.; Ogilvie, Sean P.; Large, Matthew J.; Graf, Aline Amorim; Lynch, Peter J.; Parthenios, John; Papagelis, K.; Roy, Soumyabrata; Saadi, M. A. S. R.; Rahman, Muhammad M.; Pugno, Nicola; King, Alice A. K.; Ajayan, Pulickel M.; Dalton, Alan B.

doi:10.1021/acsnano.0c06701

Cited by 56 publications

(60 citation statements)

References 57 publications

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“…The ALD-grown SnS thin film has an orthorhombic structure, as indicated by Raman peak at 159 cm –1 , and is expected to have in-plane 2D ferroelectricity (Figure b ) , but the out-of-plane piezoelectric response is not generally expected. Nevertheless, the out-of-plane piezoelectric coefficient, d 33 , can still be observed due to structural defects, interface roughness, atomic vacancies, and an incomplete phase transition. , To determine the optimal thickness of each layer, we have prepared the PENG with different layer thicknesses of 2.5, 5, 7.5, and 10 nm for both SnS 2 and SnS. With the prepared thin films, the piezoelectric output performance of each device was examined.…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, the out-of-plane piezoelectric coefficient, d 33 , can still be observed due to structural defects, interface roughness, atomic vacancies, and an incomplete phase transition. 35,36 To determine the optimal thickness of each layer, we have prepared the PENG with different layer thicknesses of 2.5, 5, 7.5, and 10 nm for both SnS 2 and SnS. With the prepared thin films, the piezoelectric output performance of each device was examined.…”

Section: Resultsmentioning

confidence: 99%

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Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Cao

Kim

et al. 2021

ACS Nano

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Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin monosulfide (SnS) and tin disulfide (SnS2) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy-harvesting devices. However, the piezoelectric output performance of the SnS2- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS2/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by ∼40% compared with that of the SnS2 thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm2 at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS2/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Cao

Kim

et al. 2021

ACS Nano

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“…There is also enduring interest in the technological applications of two-dimensional (2D) materials, including graphene, for display devices [28], flexible sensors [29][30][31], photo detectors [32][33][34][35][36], vertical field-effect transistors [37,38], and atom chips [27]. New properties and methods of cooling or patterning 2D materials have been studied [39][40][41][42][43][44][45][46][47]. As current-carrying wires in atom chips, graphene has desirable electronic properties: it has a very low density of electronic states, high carrier mobility and a linear band structure with zero band gap in the vicinity of the Dirac points [48], which leads to Johnson noise and CP attraction far below those typically found for metallic conductors on bulk substrates [19,20,27,49].…”

Section: Introductionmentioning

confidence: 99%

Casimir-Polder interactions of Rydberg atoms with graphene-based van der Waals heterostructures

Wongcharoenbhorn¹,

Koller²,

Fromhold³

et al. 2022

Preprint

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We investigate the thermal Casimir-Polder (CP) potential of 87 Rb atoms in Rydberg nS-states near single-and double-layer graphene. The dependence of the CP potential on parameters such as atom-surface distance, temperature, principal quantum number n and graphene Fermi energy are explored. Through large scale numerical simulations, we show that, in the non-retarded regime, the CP potential is dominated by the non-resonant and evanescent-wave terms which are monotonic, and that, in the retarded regime, the CP potential exhibits spatial oscillations. We identify that the most important contributions to the resonant component of the CP potential come from the nS-nP and nS-(n − 1)P transitions. Scaling of the CP potential as a function of the principal quantum number and temperature is obtained. A heterostructure comprising hexagonal boron nitride layers sandwiched between two graphene layers is also studied. When the boron nitride layer is sufficiently thin, the CP potential can be weakened by changing the Fermi energy of the top graphene layer.Our study provides insights for understanding and controlling CP potentials experienced by Rydberg atoms near single and multi-layer graphene-based van der Waals heterostructures.

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“…[30] However, the substrate on which graphene is deposited plays a pivotal role in modulating the mechanical, physical, and electronic properties. [31,32] In particular, strain induced by interaction with a substrate is one of the most intriguing parameters to adapt and tune graphene characteristics. [33,34] The role of substrate shape and its interfacial adhesion with graphene was theoretically studied by Wagner et al, [35] who observed "snap-through" event of graphene under different textured confinements.…”

Section: Introductionmentioning

confidence: 99%

Graphene Confers Ultralow Friction on Nanogear Cogs

Mescola

Paolicelli

Ogilvie

et al. 2021

Small

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Friction‐induced energy dissipation impedes the performance of nanomechanical devices. Nevertheless, the application of graphene is known to modulate frictional dissipation by inducing local strain. This work reports on the nanomechanics of graphene conformed on different textured silicon surfaces that mimic the cogs of a nanoscale gear. The variation in the pitch lengths regulates the strain induced in capped graphene revealed by scanning probe techniques, Raman spectroscopy, and molecular dynamics simulation. The atomistic visualization elucidates asymmetric straining of CC bonds over the corrugated architecture resulting in distinct friction dissipation with respect to the groove axis. Experimental results are reported for strain‐dependent solid lubrication which can be regulated by the corrugation and leads to ultralow frictional forces. The results are applicable for graphene covered corrugated structures with movable components such as nanoelectromechanical systems, nanoscale gears, and robotics.

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Structural Defects Modulate Electronic and Nanomechanical Properties of 2D Materials

Cited by 56 publications

References 57 publications

Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Casimir-Polder interactions of Rydberg atoms with graphene-based van der Waals heterostructures

Graphene Confers Ultralow Friction on Nanogear Cogs

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Structural Defects Modulate Electronic and Nanomechanical Properties of 2D Materials

Cited by 56 publications

References 57 publications

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Casimir-Polder interactions of Rydberg atoms with graphene-based van der Waals heterostructures

Graphene Confers Ultralow Friction on Nanogear Cogs

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Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition

Enhanced Piezoelectric Output Performance of the SnS₂/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition