Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells

Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes

“…According to such a mechanism, some depolarization methods have been investigated in the past. These methods involve the use of tensile-strained barriers, 17 tensile-strained quantum wells, 11,18 delta-strained auxiliary layers, 19,20 hybridstrain quantum wells, [21][22][23][24] and vertically-stacked quantum dots. [25][26][27] We notice that these previous approaches have a common point: that is, the whole active structure is some sort of combination of multiple quantum-confined layers that have different types of strain or a mixture of lattice-matched quantum-confined layers with tensile-strained layers to obtain both TE and TM optical signals.…”