“…Up to date, although previously significant studies involving structural and electronic properties have been widely carried out for the metal‐doped semiconductor clusters, for example, neutral Si n TM (TM = Fe, Ru, Os, Hf, V, Mn, Co, Zr) and cationic Si n TM + (TM = V, Mn, Cu, Ag, Au, Nb), there are few works that are available for probing the chemical nature of the bonding between TM and the semiconductor cluster, in which the bonding features are largely responsible for understanding the high stability of doped clusters. With this motivation, we have performed a systematic study for the Si x Ge y M + ( x + y = 4; M = Nb, Ta) species with 20 valence electrons, which can serve as typical model systems to study the spherical aromaticity and chemical bonding of closed‐shell species containing metal atom, and explore the doping effect of the TM atoms on the mixed Si‐Ge tetramers.…”