Structural, dielectric and electrical properties of BiFeW2O9 ceramics

Rout, Jyoshna; Padhee, R.; Das, Piyush R.; Choudhary, R. N. P.

doi:10.12988/aap.2013.13010

Cited by 6 publications

(1 citation statement)

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“…At lower frequency, the conductivity remains almost constant, and after a particular frequency, the conductivity starts to increase exponentially. This can be well explained using Jonscher’s power law: where ω is the frequency, σ dc is the frequency-independent conductivity (low-frequency region), A is the temperature-dependent pre-exponential factor, and n is the frequency exponent . As per the equation, at low frequency the conductivity is practically frequency-independent (dc conductivity), and with increasing frequency the second term in the power law equation starts to dominate.…”

Section: Resultsmentioning

confidence: 98%

Formulation of Sol–Gel Derived Bismuth Silicate Dielectric Ink for Flexible Electronics Applications

Pullanchiyodan

Surendran

2016

Ind. Eng. Chem. Res.

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An agile formulation for the development of a low dielectric constant ink of nanostructured bismuth silicate (nBSO), synthesized by sol-gel method, was demonstrated. The viscous screen printable ink was formulated by controlling the organic additives. The viscosity, as well as dynamic viscoelastic properties of the formulated ink, was suitably tuned, to yield ideal flow characteristics. Microstructure and surface roughness of the printed film were characterized, and the film shows a minimum surface roughness values (Ra = 80.3 nm and Rq = 102 nm).Microwave dielectric properties of the printed dielectric film were ɛ r = 4.36 and tanδ = 1.6×10 -2 at 10 GHz. The apparent leakage current density of the film is of the order of 10 -5 A/cm 2 . The improved dielectric and thermal properties, combined with low leakage current makes nBSO dielectric ink a suitable candidate for printed electronics.

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Section: Resultsmentioning

confidence: 98%