The high-quality (0.78-x)BiTi0.1Fe0.8Mg0.1O3-0.22CaTiO3-(x)Na0.5Bi0.5TiO3 nanoscale-thick
thin films were prepared successfully on the Pt/Ti/SiO2/Si substrate via the sol–gel method. The influence of Na0.5Bi0.5TiO3 doping on the structure,
topography, piezoelectricity, ferroelectricity, and dielectricity
of BTFM-CTO-NBT thin films was investigated systematically. The X-ray
diffraction and Raman results manifested that NBT doping induced the
formation of the tetragonal phase, which existed between the rhombohedral
and orthorhombic phases, and the elemental mappings revealed that
the distribution of each element was uniform simultaneously. X-ray
photoelectron spectroscopy analysis showed that NBT doping could effectively
restrain the reduction of Fe3+, thereby reducing the oxygen
vacancy concentration. The film had a minimum leakage current of about
3.19 × 10–10 A/cm2, a higher piezoelectric
response, a maximum remnant polarization (2P
r = 174.64 μC/cm2), and a relatively smaller
coercive field (E
c = 359.90 kV/cm) as x = 0.05. At the same time, the corresponding film had a
maximum dielectric constant (469.6) and a minimum dielectric loss
(0.063) at 1 kHz. These insights offer an alternative pathway to enhance
the properties of BTFM-CTO thin films.