Structural effect on controllable resistive memory switching in donor–acceptor polymer systems

Wang, Kun‐Li; Liu, Gang; Chen, Po-Hao; Pan, Liang; Tsai, Hsin-Luen

doi:10.1016/j.orgel.2013.11.013

Cited by 16 publications

(5 citation statements)

References 31 publications

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“…The I – V curves in Figure a suggest that these reference devices also present operating currents lower than 2 μA as we expected, further confirming that the modulation of the electrical resistivity of the nanoelectrode is an effective strategy for suppressing programming current. Impressively, the low reset current of 350 nA of the optimized device (Al/P3HT/rGO) is distinguished from other previously reported memories based on single-component synthetic polymers (Figure b), indicating the great potential of our design in low-power memories, as the power dissipation is dictated by the reset operation. ,− …”

Section: Resultsmentioning

confidence: 69%

Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout

Zhou

Pan

Zhu

et al. 2023

ACS Appl. Nano Mater.

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Tuning memory windows is vital for cross-bar memory architectures with low power and free cross-talk. Herein, we demonstrate a synergistic interface/electrode nanoengineering strategy to tune memory windows for low power operation and enhanced electrical readout in polymer devices; this approach is workable for most insulating or semiconducting polymeric mediums. Through customizing the resistivity of selectively reduced graphene oxide nanoelectrodes, an inherent sub μA current is recorded in the programming storage state. The nanocavity of the polymer interface can reduce the switching voltage due to local electric field enhancement, thus leading to tunable memory windows. By stacking a selector onto the memory, the vertical architecture features dynamic memory kinetics, enabling cross-talk-free readout by suppressing sneak leakage current paths.

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Section: Resultsmentioning

confidence: 69%

Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout

Zhou

Pan

Zhu

et al. 2023

ACS Appl. Nano Mater.

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“…Recently, organic molecular and polymeric materials, as active layers used in electrical memory devices, have attracted great attention because they can be miniaturized in memory device applications, and their properties can easily be tailored through chemical synthesis. [1][2][3][4][5] Compared with organic small molecule materials, which require more elaborate and expensive processes, such as vacuum evaporation and deposition, polymeric materials exhibit an excellent film-forming ability, low processing temperature, and a relatively high thermal and chemical resistance. Thus, polymeric materials, as solution-processed active layers, can be readily combined with a variety of solution processing techniques, including inkjet printing, spin coating, spray coating, dip coating, and roller coating for large area, flexible circuits, and electronic systems.…”

Section: Introductionmentioning

confidence: 99%

Resistive memory devices based on novel functionalized poly(aryl ether)s with pendant azobenzene

Sun

Zhang

Pang

et al. 2018

High Performance Polymers

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We designed and synthesized two novel azobenzene functionalized poly(aryl ether)s (PAEs), PAE-azo-1 and PAE-azo-2, from a new azobenzene monomer via nucleophilic aromatic substitution polycondensation. This direct polymerization approach via azobenzene monomer has the advantages of controlling the distribution and amount of the azobenzene chromophores in the polymer. Both of the polymers showed very good thermal stability and excellent solubility for future application in the electronics industry. These polymers were fabricated as films by simple spin-coating and both of them were then prepared as sandwich memory devices. PAE-azo-1 and PAE-azo-2 exhibit write-once-read-many-times-type memory behavior, which can be encoded as “0” and “1,” and possess the low operation voltage below −3.0 V. The memory mechanism was investigated through ultraviolet–visible optical absorption spectrum and the cyclic voltammetry. These obtained results indicate that the novel azobenzene functionalized PAEs are a promising candidate for low power consumption and high-performance materials for data storage.

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“…To achieve electrical bistability, aromatic polyimides (PIs) containing electron donor (D) and acceptor (A) within a single macromolecular chain have nowadays been the major topic of interest among researchers. ,− In addition to the intrinsic merits such as high-temperature stability, structure diversity, and chemical resistance, these D–A PIs could readily form conjugated structures for charge transfer (CT), which then contribute to electronic transitions between the ground and excited states through induced CT complex, resulting in desirable memory effect. ,, The memory type is determined by the stability of the formed CT complex, which could be tuned by altering the electron pull-push effect between D and A . To this end, various electron-donating species with different strength, including triphenylamine, ,− carbazole, − ferrocene, , oxadiazole, , pyrene, , and anthracene, , have been utilized and polymerized into the PI chain as electron donor.…”

Section: Introductionmentioning

confidence: 99%

“…8,12,13 The memory type is determined by the stability of the formed CT complex, which could be tuned by altering the electron pull-push effect between D and A. 14 To this end, various electron-donating species with different strength, including triphenylamine, 9,15−18 carbazole, 19−21 ferrocene, 22,23 oxadiazole, 12,16 pyrene, 24,25 and anthracene, 13,26 have been utilized and polymerized into the PI chain as electron donor. The synthesized PIs witness the achievement of memory behaviors from the volatile dynamic random access memory (DRAM) and static random access memory (SRAM) to the nonvolatile flash and write once read many times memory (WORM) upon structural variation, revealing the significance of the electron-donating moieties.…”

Section: Introductionmentioning

confidence: 99%

Triggering WORM/SRAM Memory Conversion in a Porphyrinated Polyimide via Zn Complexation as the Internal Electrode

et al. 2017

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We design two novel solution processable polyimides (PIs), NH-Por-6FDA and Zn-Por-6FDA, with 5,15-bis(4,-aminophenyl)-10,20-diphenylporphyrin (trans-DATPP) (electron donor) and 4,4′-(hexafluoroisoprpoylidine)diphthalic anhydride (6FDA) (electron acceptor) as the building blocks for polymer memory applications. The chemical structures of the two polymers are mostly identical with the only difference lying in the zinc ion (Zn2+) insertion into the porphyrin core in the Zn-Por-6FDA. Electrical characterization indicates that the NH-Por-6FDA possesses bidirectional nonvolatile write once read many times (WORM) memory behavior, while the Zn-Por-6FDA shows vastly different volatile static random access memory (SRAM) behavior. Both polymer memory devices show high ON/OFF current ratio up to 106 and exhibit excellent long-term operation stability in 108 read cycles and retention time of 4000 s with no current degradation. The charge transfer (CT) and function of the donor/acceptor moiety in the polymers related with the electrical switching effect are elucidated on the basis of optical, electrochemical measurement, and quantum simulation results. The inserted zinc ion in the porphyrin is suggested to form an internal electrode and act as a bridge during the electronic transition process, which facilitates both the CT and back CT, consequently triggering the WORM/SRAM conversion upon Zn complexation. The results observed here indicate the significance of metal-complexation on the memory effects, and will attract the attention of the researchers to use noble transition metals for the suitable expecting memory devices.

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Structural effect on controllable resistive memory switching in donor–acceptor polymer systems

Cited by 16 publications

References 31 publications

Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout

Polymer Memristive Layer with Reduced Graphene Oxide and Al Electrodes for Tunable Memory Windows with Low-Power Operation and Enhanced Electrical Readout

Resistive memory devices based on novel functionalized poly(aryl ether)s with pendant azobenzene

Triggering WORM/SRAM Memory Conversion in a Porphyrinated Polyimide via Zn Complexation as the Internal Electrode

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