Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

Lardjane, Soumia; Yazdi, Mohammad Arab Pour; Martin, Nicolas; Bellouard, C.; Fenineche, N.; Schüler, Andreas; Merad, G.; Billard, Alain

doi:10.1016/j.matchemphys.2015.04.037

Cited by 15 publications

(1 citation statement)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Effective transition-metal-doped ZnO has been proven to be the most promising room-temperature ferromagnetic material [14]. In particular, Co-doped ZnO dilute magnetic semiconductors (DMS) have raised a large interest in recent decades, because no phase transition occurs when the molar amount of cobalt dopant reaches 0.146 [15]. Moreover, doping with Fe element increases the electrical and dielectric properties of ZnO, which renders ZnO:Fe useful for electric storage applications [16].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

View full text Add to dashboard Cite

This work presents a facile sol–gel method for the deposition of ZnO and ZnO:Mg films. The films are spin coated on silicon and quartz substrates. The impact of magnesium concentrations (0, 0.5, 1, 2 and 3 wt%) and post-annealing treatments (300–600 °C) on the film’s structural, vibrational and optical properties is investigated. Undoped ZnO films crystallize in the wurtzite phase, with crystallite sizes ranging from 9.1 nm (300 °C) to 29.7 nm (600 °C). Mg doping deteriorates the film crystallization and shifting of 002 peak towards higher diffraction angles is observed, indicating the successful incorporation of Mg into the ZnO matrix. ZnO:Mg films (2 wt%) possess the smallest crystallite size, ranging from 6.2 nm (300 °C) to 25.2 nm (600 °C). The highest Mg concentration (3 wt%) results into a segregation of the MgO phase. Lattice constants, texture coefficients and Zn–O bond lengths are discussed. The diminution of the c lattice parameter is related to the replacement of Zn2+ by Mg2+ in the ZnO host lattice. The vibrational properties are studied by Fourier transform infrared (FTIR) spectroscopy. IR lines related to Mg–O bonds are found for ZnO:Mg films with dopant concentrations of 2 and 3 wt%. The optical characterization showed that the transmittance of ZnO:Mg thin films increased from 74.5% (undoped ZnO) to about 89.1% and the optical band gap energy from 3.24 to 3.56 eV. Mg doping leads to a higher refractive index compared to undoped ZnO films. The FESEM (field emission scanning electron microscopy) technique is used for observation of the surface morphology modification of ZnO:Mg films. The doped ZnO films possess a smoother grained surface structure, opposite to the wrinkle-type morphology of undoped sol–gel ZnO films. The smoother surface leads to improved transparency of ZnO:Mg films.

show abstract

Section: Introductionmentioning

confidence: 99%

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

et al. 2022

View full text Add to dashboard Cite

show abstract

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Safavi

Martin

Aubry

et al. 2021

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Two groups of Mg-Sn thin films were deposited by magnetron co-sputtering of Mg, Sn, and Cu targets. Group I was Mg-Sn films with [Mg]/[Sn] = 2 and group II with [Mg]/[Sn] = 1.75. The effect of Mg-deficiency and Cu-doping on the structure and thermoelectric properties was investigated. Both groups were doped by different Cu concentrations (0 at.%, 0.5 at.%, and 1.5 at.%). The structure and morphology of the thin films were investigated. The stable face-centered cubic structure was only observed for undoped film of group I, while a mixture of facecentered cubic and metastable orthorhombic structures coexisted for other samples whatever the Cu content. Carrier concentration and mobility were measured to explain the electronic transport behaviors of the films. The bandgap energy for both groups was estimated by the Kubelka-Munk's method. The influence of the Mg deficiency and Cu doping on the thermoelectric properties was discussed for a range of temperatures: 30-200°C. For both groups, the best figure-of-merit, ZT, was obtained at 200°C for samples doped with 0.5 at.% Cu with ZT = 0.07 for group I and ZT = 0.27 for group II.

show abstract

Control of chemical states on magnetic properties of Co-doped ZnO films prepared by oxidizing evaporated Co-Zn film with different growth modes

Wang

Gao

et al. 2018

Ceramics International

View full text Add to dashboard Cite

Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

Cited by 15 publications

References 58 publications

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Deposition of Sol–Gel ZnO:Mg Films and Investigation of Their Structural and Optical Properties

Impacts of Cu-Doping and Mg-Deficiency on Mg2Sn Thin Films Thermoelectric Properties

Control of chemical states on magnetic properties of Co-doped ZnO films prepared by oxidizing evaporated Co-Zn film with different growth modes

Contact Info

Product

Resources

About