2015
DOI: 10.1016/j.materresbull.2015.04.054
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Structural, electrical and multiferroic properties of La-doped mullite Bi2Fe4O9 thin films

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Cited by 26 publications
(4 citation statements)
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“…The Bi 2 Fe 4 O 9 crystal is also a multiferroic material with ferroelectricity and antiferromagnetism. 32,33 Furthermore, the distinct diffraction peaks at 2 θ of 18.50° and 20.04° in the XRD patterns of the PVDF and PVDF-5BFO films fit well with those of γ-PVDF. 34 As shown in the FTIR spectra in Fig.…”
Section: Resultssupporting
confidence: 56%
“…The Bi 2 Fe 4 O 9 crystal is also a multiferroic material with ferroelectricity and antiferromagnetism. 32,33 Furthermore, the distinct diffraction peaks at 2 θ of 18.50° and 20.04° in the XRD patterns of the PVDF and PVDF-5BFO films fit well with those of γ-PVDF. 34 As shown in the FTIR spectra in Fig.…”
Section: Resultssupporting
confidence: 56%
“…Intense Raman mode formed at 220 cm -1 (BFO), 219 cm -1 (BFCO0.5), 209 cm -1 (BFCO1) and 196 cm -1 (BFCO2) is related to Fe-O vibration in FeO4 tetrahedron. Similarly, other phonon modes observed for BFO (285 cm -1 , 317 cm -1 and 424 cm -1 ), BFCO0.5 (284 cm -1 , 318 cm -1 and 426 cm -1 ), BFCO1 (279 cm -1 , 320 cm -1 and 427 cm -1 ), BFCO1.5 (275 cm -1 , 321 cm -1 and 427 cm -1 ) and BFCO2 (274 cm -1 , 324 cm -1 and 428 cm -1 ) owes to vibration of Fe-O in the FeO6 octahedron [29]. It is also important to notice an emergence of additional peak for compositions x ≥ 0.01 at 558 cm -1 (BFCO1), 561 cm -1 (BFCO1.5) and 564 cm -1 (BFCO2) as shown in fig.…”
Section: Raman Studymentioning
confidence: 99%
“…These materials can be used in ferroelectric random access memories and also in novel magnetic memory devices due to their multifunctional properties [1,[4][5][6][7]. In addition, these materials enable the invention of novel energy-efficient multistate memory devices, which allow electrical writing and non-destructive magnetic reading operations through their coupling between electrical and magnetic orders [3,8,9]. Nowadays, the magneto-electric materials possess an essential role in various device applications like sensors, actuators, microelectromechanical and nanoelectromechanical systems, spintronics and data storage devices [10].…”
Section: Introductionmentioning
confidence: 99%