Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique

Yang, Ge; Gu, Genda; Bolotnikov, A. E.; Cui, Yonggang; Camarda, G. S.; Hossain, Anwar; Roy, Utpal; Kivi, Nicholas; Liu, Tiansheng; James, R. B.

doi:10.1007/s13391-015-4261-4

Cited by 13 publications

(6 citation statements)

References 20 publications

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“…CMT ingots, grown by a modified float-zone technique using an optical furnace, also showed a heavily decorated subgrain boundary network as revealed by theiretching study [11]. Our X-ray topographic study of an optically heated modified float-zone grown CMT revealed a high stress field, and thus, high lattice distortion throughout the wafer [22]. Its presence possibly was due to the very high temperature gradient imposed by the optical float-zone technique, whichresults in very high thermal stress in the grown ingots.…”

Section: Resultsmentioning

confidence: 73%

Growth and characterization of CdMnTe by the vertical Bridgman technique

Roy

Camarda

Cui

et al. 2016

Journal of Crystal Growth

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Wegrew Cd 1-x Mn x Te crystals witha nominal Mn concentrationof 5% by the vertical Bridgman growth technique. The structural quality of the crystal was evaluated by white beam X-ray topography in the National Synchrotron Light Source (NSLS) facility at Brookhaven National Laboratory (BNL). We observed that the crystal was free from a sub-grain boundary network, as revealed by X-ray topography and verified by our etching study. The concentration of the secondary phases, averaged over the entire ingot, was 2-3 times lower than in conventional Bridgman grown cadmium zinc telluride (CZT)crystals.

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Section: Resultsmentioning

confidence: 73%

Growth and characterization of CdMnTe by the vertical Bridgman technique

Roy

Camarda

Cui

et al. 2016

Journal of Crystal Growth

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“…In contrast to Zn in CdTe, where the segregation coefficient is 1.35, Be has a close unity value [17]. Because of this distinction, Be distribution in CdTe is more uniform than the Zn distribution in CdTe, which exhibits a substantial variance.…”

Section: Introductionmentioning

confidence: 94%

Study of the Thermal Properties and Lattice Disorder Effects in CdTe–Based Crystals: CdBeTe, CdMnTe, and CdZnTe

et al. 2022

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Mixed semiconductor ternary crystals were grown using the Bridgman–Stockbarger method. This is a high–temperature and high–pressure crystal growth method. Cd1–xBexTe crystals were grown in the range of composition 0 < x < 0.1, such as 0.00, 0.01, 0.03, 0.05, and 0.1. The main goal of this paper was to compare the thermal properties of CdBeTe with previously grown CdMnTe and CdZnTe–mixed ternary crystals. The photopyroelectric technique was applied to examine the thermal properties. The thermal diffusivity and effusivity values were obtained after testing all the samples, and the thermal conductivity was calculated then. As such, a complete thermal characterization of the crystals was carried out. For further characterization, the thermal conductivity versus composition was checked by applying the Sadao Adachi model. Thanks to that, we were able to determine the total thermal resistivity of the crystals and the additional resistivity which arises from the lattice disorder. As such, the disorder effects arising from substituting the native atom with a foreign one were characterized for all crystals. We were looking for the best substitution of the Cd atom in the CdTe matrix based on the compounds’ thermal properties. It turned out that Zn and Mn introduce a similar disorder, with Be being the highest one.

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“…A suitable Verdet constant is offered by CdMn(Hg)Te and miniaturized optical isolators have been demonstrated at 976 nm [32], 647 nm [33] and 633 nm [34]. The material quality still needs to be improved and is the focus of current research [35,36].…”

Section: The Issue Of Feedback When Miniaturizing Mopasmentioning

confidence: 99%

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

Blume,

Müller,

Hildenstein

et al. 2024

Components and Packaging for Laser Systems X

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Semiconductor master-oscillator power-amplifiers (MOPAs) are versatile tools for various applications. We will present high-power (P > 5 W), high-coherence length (Lc > 100 m), small-sized (L ≤ 25 mm), hybrid semiconductor MOPAs at 920 nm, 976 nm, 1030 nm, 1064 nm, 1120 nm, and 1154 nm. We compare their performance to corresponding distributed Bragg reflector tapered laser and discuss strategies to extend the wavelength range.

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Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique

Cited by 13 publications

References 20 publications

Growth and characterization of CdMnTe by the vertical Bridgman technique

Growth and characterization of CdMnTe by the vertical Bridgman technique

Study of the Thermal Properties and Lattice Disorder Effects in CdTe–Based Crystals: CdBeTe, CdMnTe, and CdZnTe

Hybrid semiconductor master-oscillator power-amplifiers with more than 5 W optical output power

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