Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

Kumar, Arvind; Obulapathi, L.; Sarmash, T. Sofi; Rani, Dipti; Maddaiah, M.; Rao, T. Srinivasa; Asokan, K.

doi:10.1007/s11837-015-1344-5

Cited by 21 publications

(5 citation statements)

References 31 publications

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“…A similar trend was observed by Kumar et al in samples synthesized by reactive dc magnetron sputtering. 28 In the work of Makino and Segawa Ga-doped, ZnO was found to have E F > E C at 300 K for carrier concentrations exceeding 10 19 -10 20 cm À3 . 29 This indicates that the carrier concentrations measured for the present Zn 1-x Cd x O samples are in the correct order of magnitude to exhibit degenerate behavior.…”

Section: Resultsmentioning

confidence: 97%

Bandgap and band edge positions in compositionally graded ZnCdO

Jensen

Johansen

Zhan

et al. 2018

Journal of Applied Physics

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Introducing Cd into ZnO allows for bandgap engineering, potentially with particularly interesting properties to observe in compositionally graded samples. In this work, compositionally graded Zn 1-x Cd x O samples with 0 x < 0.16 were made using metal organic vapour phase epitaxy. The chemical composition was studied using scanning transmission electron microscopy, while the band structure of the samples was investigated using a combination of cathodoluminescence spectroscopy and X-ray photoelectron spectroscopy (XPS). It is found that the reduction of the bandgap in our samples is caused by changes in the conduction band. The position of the Fermi level relative to the vacuum level, i.e., the workfunction, was also found to change upon addition of Cd, giving an apparent shift in the valence band when evaluated from the XPS valence spectra.

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Section: Resultsmentioning

confidence: 97%

Bandgap and band edge positions in compositionally graded ZnCdO

Jensen

Johansen

Zhan

et al. 2018

Journal of Applied Physics

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“…The optical band-gap of the Zn 1-x Cd x O was varying from 3.24 to 2.22 eV. Kumar et al [32]. shown a small band gap can tuned 3.37-3.14 eV with lower wt.…”

Section: Optical Propertiesmentioning

confidence: 97%

“…reported stable hexagonal crystal structure for low Cd doped ZnO with grain size 40-50 nm. Kumar et al [32]. observed the XRD patterns of thin films of cadmium (0 wt.%, 2 wt.%, 4 wt.% and 10 wt.%) doped zinc oxide which has been deposited on a glass substrate by reactive DC magnetron sputtering [18].…”

Section: Structural Characterizationmentioning

confidence: 99%

Comparative Study of Synthesis of CdO-ZnO Nanocomposite Thin Films by Different Methods: A Review

Purohit¹

2016

NSTOA

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II-VI semiconductors, owing to the availability of a large variety of techniques to prepare it, the large number of structures and nanostructures in which it can be condensed, as well as the large and varied number of industrial applications [13]. ZnO has a wurtzite structure in which the oxygen atoms are arranged in a hexagonal-close-packed lattice with zinc atoms occupying half the tetrahedral sites. This is a very well known semiconductor with a wide band gap in the near ultraviolet of ~ 3.37 eV at room temperature [14]. Cadmium oxide (CdO) is also a well-known II-VI n-type semiconductor that has interesting properties for optoelectronic applications due to its large band gap, low electrical resistivity and high optical transmittance in the visible region of the solar spectrum [15]. It can be found in various types of nano structures with a variety of properties and applications such as UV and visible photoluminescence, photo catalysts and field emission, ambient temperature ferromagnetism and high electronic mobility [16] as well as photo detectors, solar cells, piezoelectric devices [17]. It has been well studied as a sensor material to detect most of the reducing gases [18]. CdO has a rock salt crystal structure with a direct band gap of 2.2 eV to 2.5 eV and indirect band gap of 1.98 eV, which makes it useful for a wide range of applications such as solar cells, photodiodes, and transparent electrodes and sensors [19][20][21][22] [29]. In the present work we have done a comparative study of transports properties of ZnO-CdO thin films synthesis by sol-gel, magnetron sputtering and spray pyrolisis techniques.

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“…The electrical behavior of (Cr, Ni, Mn, and Cd)-doped ZnO thin films was studied by some authors [30][31][32][33] and they were shown an improvement in electrical properties of ZnO. This difference is due to the preparation method.…”

Section: Electrical Analysismentioning

confidence: 99%

Effect of Transition Metals on the Mechanical Properties of ZnO Thin Films, Prepared by Sol-Gel Method

Benzitouni

Zaabat

Ebothé

et al. 2020

JNanoR

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Undoped and transition metals (TM = Cr, Ni, Mn and Cd) doped zinc oxide (ZnO) thin films were prepared by sol-gel dip-coating method on glass substrates at 300 °C. In this study, the effect of dopant material on the structural, morphological, optical, electrical and mechanical properties of ZnO thin films is investigated by using XRD, AFM, UV-Vis, Hall effect and nanoindentation techniques, respectively. Nanocrystalline films with a ZnO hexagonal wurtzite structure and two preferred orientations (002) and (103) were obtained. UV-Vis transmittance spectra showed that all the films are highly transparent in the visible region (> 80 %). Moreover, the optical band gap of the films decreased to 3.13 eV with an increasing orbital occupation number of 3d electrons. AFM-topography shows that the films are dense, smooth and uniform, except for the high roughness RMS =26.3 nm obtained for Cd-doped ZnO. Finally, the dopant material is found to have a significant effect on the mechanical behavior of ZnO as compared to the undoped material. For Ni and Cd dopants, analysis of load and unload data yields an increase in the hardness (8.96 ± 0.22 GPa) and Young’s modulus (122 ± 7.46 GPa) of ZnO as compared to Cr and Mn dopants. Therefore, Ni and Cd are the appropriate dopants for the design and application of ZnO-based nanoelectromechanical systems.

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Structural, Electrical and Optical Properties of Cd Doped ZnO Thin Films by Reactive dc Magnetron Sputtering

Cited by 21 publications

References 31 publications

Bandgap and band edge positions in compositionally graded ZnCdO

Bandgap and band edge positions in compositionally graded ZnCdO

Comparative Study of Synthesis of CdO-ZnO Nanocomposite Thin Films by Different Methods: A Review

Effect of Transition Metals on the Mechanical Properties of ZnO Thin Films, Prepared by Sol-Gel Method

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