Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

Abstract

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films

“…The dislocation density is observed to increase for thickness 631 nm while decrease for 810 nm owing to variation in corresponding crystallinity and grain size. The results are in agreement with earlier reported work of Velumani et al [8] and Reddy et al [26]. The texture is defined as a non-random distribution of crystal orientation [29] and texture coefficient (TC) presents the texture of a particular plane which implies the preferred growth along deviation from unity [30].…”

“…1 XRD patterns of CdSe thin films constant. The peak intensity is decreased for thickness 631 nm and increased for 810 nm which revealed to the variation in the crystallinity [26]. The crystallographic parameters such as lattice constant, inter-planar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient were calculated using relation concerned [23].…”