Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Zhangyang, Xingyue; Liu, Lei; Lu, Feifei

doi:10.1016/j.apsusc.2022.153394

Cited by 16 publications

(2 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They found that NWs have better light absorption compared to thin film structures. In addition, increasing the content of In component will shorten the bandgap of InGaN NWs and make the absorption threshold respond to redshift . Um et al.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

Cao,

Liu,

Tian

et al. 2024

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

We propose to improve the solar energy utilization by using InGaN inclined nanowire array photocathodes. We first study vertical nanowire array. On the basis of vertical nanowire array, we study inclined nanowires by changing the inclination angle of nanowires. The inclined nanowires exhibit higher quantum efficiency at larger period and larger inclination angle. However, the infinite expansion of period will cause its performance to degrade. The quantum efficiency of inclined nanowires with a period of 175 nm and an inclination angle of 5.35°is as high as 80.2% when the incident light angle is irradiated at 5°. In addition, applying an electric field can improve the collection efficiency of inclined nanowires and help them maintain a high collection efficiency over a longer wavelength range. The design principles proposed in this work will provide a theoretical reference for the performance improvement of InGaN photocathodes.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhanced Photoemission Performance of InGaN Inclined Nanowire Array

Cao,

Liu,

Tian

et al. 2024

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

show abstract

“…Owing to the large surface area-to-volume ratio, tunable direct band gaps, fast charge transport and high absorption coefficient, most compositions of group III-V semiconductor NWs have been widely used in high-speed, low-energy electronic and optoelectronic devices, [1][2][3][4][5][6] including FETs, integrated circuits and infrared photodetectors. [7][8][9][10][11][12][13] In particular, InSb NWs are very promising for use in FET devices, which are pivotal to modern Si-based semiconductor technologies, due to their narrow band gap (∼0.17 eV), large absolute value of the g factor (∼51) and huge exciton Bohr radius (∼61 nm).…”

Section: Introductionmentioning

confidence: 99%