The geometries, relative stabilities, and electronic properties of small rubidium-doped silicon clusters RbSi n (n 5 1-12) have been systematically investigated using the density functional theory at the B3LYP/GENECP level. The optimized structures show that lowest-energy isomers of RbSi n are similar with the ground state isomers of pure Si n clusters and prefer the threedimensional for n 5 3-12. The relative stabilities of RbSi n clusters have been analyzed on the averaged binding energy, fragmentation energy, second-order energy difference, and highest occupied molecular orbital-lowest unoccupied molecular orbital energy gap. The calculated results indicate that the doping of Rb atom enhances the chemical activity of Si n frame and the magic number is RbSi 2 . The Mulliken population analysis reveals that the charges in the corresponding RbSi n clusters transfer from the Rb atom to Si atoms. The partial density of states and chemical hardness are also discussed.