Structural, electronic and optical properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:msub><mml:mi>A</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>S</mml:mi><mml:mi>n</mml:mi><mml:mi>B</mml:mi><mml:msub><mml:mi>r</mml:mi><mml:mn>6</mml:mn></mml:msub></mml:mrow></mml:math> (A = K, Cs, and Rb) for photovoltaic applications: First-principles calculation

Kinani, M.A.; Chami, R.; Lekdadri, A.; ElRharib, A.; Mir, Y.; Hlil, E.K.; Amine, A.; Zazoui, M.

doi:10.1016/j.cocom.2020.e00520

Cited by 5 publications

(1 citation statement)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A wide bandgap also indicates the material remains more semiconductive at higher temperatures, as in silicon that has a bandgap of 1.12 eV. As a result, the thermal generation of carriers becomes more dominant over the purposefully doped amount of carriers at higher temperatures [7][8][9]. The performance of GaAs solar cells has been improved using a technique that focuses on improving their architectures, such as textured surfaces for light trapping and surface passivation, such as the SiO 2 /Si interface to reduce surface recombination rate, and the use of an 𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴𝐴 window and a back surface layer (BSF) to reduce surface recombination velocity [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Numerical modeling of p-i-n GaAs solar cell performance

Chahid¹

2022

JOR

View full text Add to dashboard Cite

This study aims to improve and evaluate the external quantum efficiency (EQE) of p-i-n GaAs solar cells. The current densities of minority carriers and the geometrical and physical cell parameters were calculated using the finite difference method. As a result, the EQE simulation findings are extremely close to the experimental data, and a maximum EQE of 57.26 %, with optimum layer thicknesses (µm) of p, i, and n are respectively 0.2,1,4, and n and p layers doping (cm-3 ) of 1020 cm-3 and 4 × 1017 cm-3 . The adding of p+-AlGaAs window layer increases the energy conversion efficiency (%) from 19.41 to 25.45.

show abstract

Section: Introductionmentioning

confidence: 99%