Structural, electronic, magnetic and optical properties of semiconductor Zn 1−x Mo x Te compound

Feng, Zhong-Ying; Zhang, Jianmin

doi:10.1016/j.jpcs.2017.10.013

“…Because of this feature, half-metallic Heusler alloys can be considered as the most important class of spintronic materials. [19][20][21][22][23] Half-metallic material alloys have been found in some kinds of materials such as full 16,[24][25][26][27][28][29] and half Heusler alloys, 15,30,31 binary compounds [32][33][34] and 2D materials. [35][36][37] Recently, in a theoretical study, the effect of Ge substitution on the thermoelectric properties of the Heusler-type alloy Fe 2 -MnSi x Ge 1Àx has been investigated by Reshak.…”

Section: Introductionmentioning

confidence: 99%

“…Because of this feature, half-metallic Heusler alloys can be considered as the most important class of spintronic materials. 19–23 Half-metallic material alloys have been found in some kinds of materials such as full 16,24–29 and half Heusler alloys, 15,30,31 binary compounds 32–34 and 2D materials. 35–37 …”

Section: Introductionmentioning

confidence: 99%

Electronic, optical and thermoelectric properties of Fe₂ZrP compound determined via first-principles calculations

Pakizeh

¹

,

Jalilian

²

,

Mohammadi

³

2019

View full text Add to dashboard Cite

show abstract

“…The incorporation of a magnetic transition metal ion into the semiconductors leads to a strong s-d interaction between the carriers and the local magnetic ions that may modify the spin splitting and the spin polarization properties. ZnTe is an important II-VI semiconductor with a wide and direct band gap of 2.26 eV at room temperature with applications in optoelectronic and thermoelectric devices 6 , 7 . Its recent integration with DMS materials in various forms (bulk, thin film or nanostructured) has been object of investigation concerning their structural, electrical and magnetic behavior 6 , 8 , 9 .…”

Section: Introductionmentioning

confidence: 99%

Zn$$_{1-x}$$Ni$$_x$$Te semiconductor nanocrystals in transparent glass for optoelectronic device applications

Mada

¹

,

Darabian

²

,

Seshadri

³

et al. 2023

Sci Rep

2

0

View full text Add to dashboard Cite

Doping glass with semiconductors, particularly with nanostructured semiconductors, has attracted attention due to the large optical absorption cross-sections of the latter. Based on this property, Ni$$^{2+}$$ 2 + (5 wt%) doped phosphate glass and Zn$$_{1-x}$$ 1 - x Ni$$_x$$ x Te (x = 0.5, 1.0, 5.0 and 10.0 wt% of Ni$$^{2+}$$ 2 + ) nanocrystals (NCs) doped phosphate glasses (GCs) were prepared by fusion method and subsequent heat treatment. Influence of Ni$$^{2+}$$ 2 + on structural, thermo-optical and third-order nonlinear optical properties have been analysed through various spectroscopic characterizations. The XRD pattern of the glass (G) exhibits the amorphous nature of the host material while GCs exhibit not only amorphous halo but also the presence of quantum dots (QDs) or nanocrystals (NCs) phases. TEM analysis of the studied GCs samples confirm the presence of quantum dots (QDs) and bulk NCs with an average diameter of approximately 4.2 $${\pm }$$ ± 0.3 nm and 13.4 $${\pm }$$ ± 0.2 nm, respectively. Several phosphate groups were observed and reported from Raman and FTIR-ATR spectra. The absorption band positions confirmed that Ni$$^{2+}$$ 2 + ions resemble to the octahedral symmetry. The intensity of absorption band around 1352 nm ($$^3$$ 3 T$${_1}$$ 1 (F) $$\rightarrow$$ → $$^3$$ 3 A$${_2}$$ 2 (F)) increased with the increase of Ni$$^{2+}$$ 2 + in GCs which is an indicative of the $$^{[6]}$$ [ 6 ] Ni$$^{2+}$$ 2 + coordination. The emission properties such as emission cross-sections ($${\sigma }_{emi}$$ σ emi ) full width at half maxima (FWHM) for the $$^1$$ 1 T$${_2}$$ 2 (D) $$\rightarrow$$ → $$^3$$ 3 T$${_2}$$ 2 (F) (visible) and $$^3$$ 3 A$${_2}$$ 2 (F) $$\rightarrow$$ → $$^3$$ 3 T$${_1}$$ 1 (F) (near-infrared) emission transitions were reported. Among the glass-containing semiconductor nanocrystals (GCs), the emission cross-sections in GC4 sample (x = 10% of Ni$$^{2+}$$ 2 + ) are the largest for both the visible (11.88 $$\times$$ × 10$$^{-18}$$ - 18 cm$$^2$$ 2 ) and infrared (0.98 $$\times$$ × 10$$^{-20}$$ - 20 cm$$^2$$ 2 ) transitions. Thermal diffusivity (D), thermal conductivity (K) and temperature dependent optical path length change (ds/dT) were obtained through time-resolved thermal lens (TL) and thermal relaxation (TR) methods. The D and K parameters do not change significantly with increase of Ni$$^{2+}$$ 2 + ions (0.5–5%) in GCs. Nonlinear-refractive index and nonlinear absorption of the studied samples were also obtained using femtosecond Z-scan technique. The increase of nonlinear absorption coefficient ($$\beta$$ β ) is observed from GC2 (2.53 $${\times }$$ × 10$$^{-10}$$ - 10 cm/W) to GC4 (7.98 $${\times }$$ × 10$$^{-10}$$ - 10 cm/W). The GC4, sample with 10 wt% of Ni$$^{2+}$$ 2 + , showed the lowest ds/dT (1.22 $$\times$$ × 10$$^{-6}$$ - 6 K$$^{-1}$$ - 1 ) with good lasing (FOM and emission cross-sections) and nonlinear absorption properties suggesting that it can be a good candidate for visible-red emission light conversion in LED technology.

show abstract

“…Some half-metallic ferromagnetic materials which can be considered as hybrids between semiconductors and metals are used in spintronic applications such as spin valves [4][5][6][7], spin lters [8], magnetic sensors [9,10], memory storages [11][12][13], and tunneling magnetoresistance effect [14][15][16][17]. Most representative halfmetallic materials belong to either Heusler alloys (full, half, as well as quaternary) [18][19][20][21][22][23][24][25] or dilute magnetic semiconductors [26][27][28][29][30] or transition metal oxides in different chemical compositions and structural types, such as perovskites [31][32][33][34] or double perovskites [35][36][37][38][39][40][41][42][43][44][45][46][47]. Another widely discussed scenario for d 0 dilute magnetic semiconductors is based on a quite unexpected effect of magnetization of non-magnetic matrix induced by nonmagnetic 2p im...…”

Section: Introductionmentioning

confidence: 99%

Half-metallic ferromagnetism in non-magnetic double perovskite oxides Sr₂MSbO₆ (M=Al, Ga) doped with C and N

Bendjebbour

¹

,

SEDDIK

²

,

Mohamed

³

et al. 2022

Philosophical Magazine

View full text Add to dashboard Cite

Double perovskite oxides have gained tremendous attention in material science and device technology due to their facile synthesis and exceptional physical properties. In this paper, we elucidate the origin of magnetization in non magnetic double perovskite oxides Sr 2 MSbO 6 (M=Al, Ga) induced by non-magnetic 2p-impurities (C and N) substituted. The calculations were done within the full potential linearized augmented plane wave method (FP-LAPW) in the framework of the density functional theory (DFT). The exchange-correlation potential is evaluated using the generalized gradient approximation (GGA) of Perdew-Burke-Ernzerhof (PBE) and the modi ed Becke and Johnson (mBJ-GGA). Regarding structural properties of undoped double perovskites Sr 2 MSbO 6 (M=Al, Ga), we found that the lattice constants and oxygen positions are in rational accord with the experimental results. Furthermore, both of the examined compounds are brittle in nature with isotropic character. For Sr 2 AlSbO 6 we have got the values of energy gap equal to 1.9 eV and 3.7 eV within the GGA and the mBJ-GGA, respectively. However for Sr 2 GaSbO 6 the values of energy gap obtained in GGA and mBJ-GGA are equal to 0.8 eV and 2.9 eV, respectively.Finally, spin-polarized calculations reveal that the doping C and N can lead to drastic changes in the magneto-electronic properties of the semiconducting Sr 2 MSbO 6 matrix with the integer magnetic moment of 6.00 µ B and exhibit half-metallic properties. The origin of ferromagnetism can be attributed to the spin-split impurity bands inside the energy gap of the semiconducting Sr 2 MSbO 6 matrix. These results may help experimentalists in synthesizing new double perovskites for spintronic applications.

show abstract

Structural, electronic, magnetic and optical properties of semiconductor Zn 1−x Mo x Te compound

Cited by 19 publications

References 34 publications

Electronic, optical and thermoelectric properties of Fe₂ZrP compound determined via first-principles calculations

Electronic, optical and thermoelectric properties of Fe₂ZrP compound determined via first-principles calculations

Zn$$_{1-x}$$Ni$$_x$$Te semiconductor nanocrystals in transparent glass for optoelectronic device applications

Half-metallic ferromagnetism in non-magnetic double perovskite oxides Sr₂MSbO₆ (M=Al, Ga) doped with C and N

Contact Info

Product

Resources

About

Structural, electronic, magnetic and optical properties of semiconductor Zn 1−x Mo x Te compound

Cited by 19 publications

References 34 publications

Electronic, optical and thermoelectric properties of Fe2ZrP compound determined via first-principles calculations

Electronic, optical and thermoelectric properties of Fe2ZrP compound determined via first-principles calculations

Zn$$_{1-x}$$Ni$$_x$$Te semiconductor nanocrystals in transparent glass for optoelectronic device applications

Half-metallic ferromagnetism in non-magnetic double perovskite oxides Sr2MSbO6 (M=Al, Ga) doped with C and N

Contact Info

Product

Resources

About

Electronic, optical and thermoelectric properties of Fe₂ZrP compound determined via first-principles calculations

Electronic, optical and thermoelectric properties of Fe₂ZrP compound determined via first-principles calculations

Half-metallic ferromagnetism in non-magnetic double perovskite oxides Sr₂MSbO₆ (M=Al, Ga) doped with C and N