Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Li, Qi; Dong, Junchen; Han, Dedong; Xu, Dengqin; Wang, Jingyi; Wang, Yi

doi:10.3390/nano12071167

Cited by 3 publications

(1 citation statement)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In recent years, oxide thin-film transistors have become a research hotspot in the display field due to their excellent characteristics such as high mobility, excellent uniformity, and high visible light transmittance [ 1 , 2 , 3 , 4 , 5 ]. Indium-containing metal oxide semiconductors, such as InZnO, InGaZnO, and HfInZnO, have been widely studied, due to high carrier mobility arising from the special electron configuration (n − 1)d 10 ns 0 of the In ion [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

et al. 2022

View full text Add to dashboard Cite

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

et al. 2022

View full text Add to dashboard Cite

show abstract

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Wang,

Li,

Lan

et al. 2023

Nat Commun

View full text Add to dashboard Cite

The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall deposition for novel 3D architecture. An optimized ALD deposited ZnO thin-film transistor achieving a record field-effect and intrinsic mobility (µFE /µo) of 85/140 cm2/V·s is presented here. The ZnO TFT was integrated with HfO2 RRAM in a 1 kbit (32 × 32) 1T1R array, demonstrating functionalities in RRAM switching. In order to co-design for future technology requiring high performance BEOL circuitries implementation, a spice-compatible model of the ZnO TFTs was developed. We then present designs of various ZnO TFT-based inverters, and 5-stage ring oscillators through simulations and experiments with working frequency exceeding 10’s of MHz.

show abstract

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Guo,

Wang,

Wang

et al. 2024

Micromachines

View full text Add to dashboard Cite

The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability. The off-state current is reduced by a factor of 10, the switching ratio is increased to 1.59 × 108, and the threshold voltage shift is reduced in PBS and NBS tests. In addition, the transmittance of all devices is greater than 80% in the visible range, and the optical bandgap of the TFTs is increased from 3.61 eV to 3.84 eV after Ga doping. The current enhancement of the GZTO TFTs is more pronounced under UV irradiation, with higher responsiveness and better-sustained photoconductivity. It is proved that Ga doped into ZTO as a carrier suppressor can better combine with oxygen vacancies and reduce the concentration of oxygen vacancies and oxygen defects compared with Zn and Sn atoms, thus improving stability. GaO, as a wide bandgap material, can improve the optical bandgap of GZTO TFTs so that they can better absorb the light in the UV wavelength band, and they can be used in the field of UV photodetection.

show abstract

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Cited by 3 publications

References 33 publications

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Contact Info

Product

Resources

About