The goal of the present work is to study the effect of doping on the pressure-induced phase transitions in In 2 O 3 . Manganesedoping was chosen for the present study because the stable ambient pressure phases of the pure oxides (hereafter denoted as c-In 2 O 3 and c-Mn 2 O 3 ) both have bixbyite-type (space group Ia-3, No. 206) structure but are crystallized in different structures at higher pressures and temperatures, as displayed in Fig. 1 In previous investigations laser-heated diamond-anvil cells (DACs) were employed to compress and heat c-In 2 O 3 specimens.6-7,10-12 However, temperatures below 1000 uC, where several phase transitions in In 2 O 3 are expected, are very difficult to control with this technique. Externally heated DACs may be used, but would also produce very limited amounts of a high-pressure polymorph that can be recovered to ambient conditions. A synthesis method providing both in situ control and macroscopic quantities of the target material, suitable for physico-chemical characterization after quenching from high pressure and temperature is available in the form of large volume (multi-anvil) presses at synchrotron facilities. 13 For the present study, the phase development in Mn-doped c-In 2 O 3 was followed in situ by energydispersive X-ray diffractometry at the two stage 6-8 MAX200X multi-anvil high pressure diffractometer of the GFZ Potsdam (beamline W2, HASYLAB/DESY, Hamburg, Germany). New high-pressure/high-temperature multi-anvil assemblies for synchrotron studies developed at the Freiberg High Pressure