2020
DOI: 10.1016/j.matchemphys.2019.122407
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Structural features and thermoelectric properties of spark plasma assisted combustion synthesised Magnesium silicide doped with Aluminium

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Cited by 8 publications
(5 citation statements)
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“…The Al doped material presents broader peaks, which is attributed to the decrease of the crystalline size and the introduced lattice strain; this was caused from the introduction of aluminum and the thermochemical diffusion process. Furthermore, the peak broadening is considered to be affected from crystallite size, while strain broadening is neglected [32], which is in agreement with Al doped materials [33].…”
Section: Samplesupporting
confidence: 67%
“…The Al doped material presents broader peaks, which is attributed to the decrease of the crystalline size and the introduced lattice strain; this was caused from the introduction of aluminum and the thermochemical diffusion process. Furthermore, the peak broadening is considered to be affected from crystallite size, while strain broadening is neglected [32], which is in agreement with Al doped materials [33].…”
Section: Samplesupporting
confidence: 67%
“…The case of Al diffusion into n-type Mg 2 (Si,Sn) was already discussed in a previous work, where no gradient was found after contacting with non-coated Al foils [30], similarly to the first results in this work (see line scans in SI). It also appears that Al is a poor dopant for this material system as shown in [49][50][51][52][53]. It is, therefore, unlikely that the diffusion of Al into the n-type TE material is at the origin of the change in carrier concentration.…”
Section: Discussionmentioning
confidence: 92%
“…Moreover, Ag is well-known as a p-type dopant for Mg2(Si,Sn), it is therefore plausible that its diffusion into the n-type material decreases its carrier concentration. On the other hand Al was predicted and shown to be a rather poor dopant in Mg2(Si,Sn) [62][63][64][65][66], with the data focusing on the Si-rich side of the spectrum. In our case of hypothetical uncontrolled Al-doping, the effect on carrier concentration would therefore be expected to be rather weak.…”
Section: Discussionmentioning
confidence: 99%