Polycrystalline randomly oriented CaMnO 3 films were successfully deposited on sapphire substrates by soft chemistry methods. The precursor solutions were obtained from a mixture of metal acetates dissolved in acids. The Seebeck coefficient and the electrical resistivity were measured in the temperature range of 300 K , T , 1000 K. Modifications of thermal annealing procedures during the deposition of precursor layers resulted in different power factor values. Thermal annealing of CaMnO 3 films at 900°C for 48 h after four-layer depositions (route A) resulted in a pure perovskite phase with higher power factor and electrical resistivity than four-layer depositions of films annealed layer by layer at 900°C for 48 h (route B). The studied films have negative Seebeck coefficients indicative of n-type conduction and electrical resistivities showing semiconducting behavior.