The AgInS
2
colloidal quantum dot (CQD) is a promising
photoanode material with a relatively wide band gap for photoelectrochemical
(PEC) solar-driven hydrogen (H
2
) evolution. However, the
unsuitable energy band structure still forms undesired energy barriers
and leads to serious charge carrier recombination with low solar to
hydrogen conversion efficiency. Here, we propose to use the ZnS shell
for defect passivation and Cu ion doping for band structure engineering
to design and synthesize a series of Cu
x
Ag
1–
x
InS
2
/ZnS CQDs.
ZnS shell-assisted defect passivation suppresses charge carrier recombination
because of the formation of the core/shell heterojunction interface,
enhancing the performance of PEC devices with better charge separation
and stability. More importantly, the tunable Cu doping concentration
in AgInS
2
CQDs leads to the shift of the quantum dot band
alignment, which greatly promotes the interfacial charge separation
and transfer. As a result, Cu
x
Ag
1–
x
InS
2
/ZnS CQD photoanodes for PEC cells
exhibit an enhanced photocurrent of 5.8 mA cm
–2
at
0.8 V versus the RHE, showing excellent photoelectrocatalytic activity
for H
2
production with greater chemical-/photostability.