Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si

Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)

“…For the RTCVD carbonization a "quasi-two-dimensional" nucleation was used, which results in atomically flat SiC surfaces with a stepped morphology. 19 In the case of the UHVCVD carbonization, the Stranski-Krastanov-like nucleation bears a rougher morphology including surface undulations with a typical width and amplitude of 15-25 nm and 1-2 nm, respectively, as well as sporadic pits until the silicon substrate with an area density of 2% ͓see Fig. 5͑b͔͒.…”

“…The detailed report on the carbonization experiments can be found elsewhere. 19 On both types of the templates, the two-step growth of AlN has been carried out: nucleation and growth of a 30-40nm-thick midtemperature AlN buffer layer ͑T sub ϳ 630°C͒ followed by the temperature ramp ͑50 K / min͒. The grown layers have a final thickness of ϳ200-300 nm.…”

Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

“…Un mecanismo de crecimiento tridimensional sin saturación o de tipo Stranski-Krastanov da explicación a lo ocurrido. Para conseguir la mejor monocristalinidad en las muestras, las reacciones deben ser más cortas en tiempo y deben perseguir el seguimiento de un mecanismo de crecimiento cuasi-dimensional con saturación rápida que daría lugar a capas ultra delgadas [7].…”

Effect of hydrogen flow on growth of 3C-SiC heteroepitaxial layers on Si(111) substrates

“…Usually, the formation of these voids is due to the out-diffusion of silicon atoms from silicon substrates in order to take part to the reaction and create the SiC buffer layer at the carbonization stage [11,15,30]. In order to investigate the dependence of voids at the interface on the H 2 flow rate, cross-sectional SEM was performed and the images were displayed in M a n u s c r i p t …”

“…Many studies have been performed on this topic, which indicated the voids is due to the out-diffusion of silicon atoms from silicon substrates in order to take part to the reaction at the initial carbonization stage [14]. It is still difficult to obtain large-area single-crystal 3C-SiC films with no defects and voids at the interface [15]. In addition, the growth mechanism of 3C-SiC films and the roles of gas phase composition were not yet comprehensively studied.…”