Structural, magnetic, and electron-transport properties of epitaxial Mn2PtSn films

Abstract

The growth of new magnetic materials on suitable insulating substrates is an important part of the development of spin-electronics devices for memory or information processing. Epitaxial thin films of Mn2PtSn were grown on a MgO [001] substrate by magnetron co-sputtering of the constituents. Structural, magnetic, and electron-transport properties were investigated. The epitaxial Mn2PtSn film has an inverse tetragonal structure with the c-axis aligned in the plane of the MgO substrate. The lattice constants determined using XRD and TEM analysis are c = 6.124 Å and a = b = 4.505 Å. The orientation of Mn2PtSn c-axis which is 45° away from the a-axis of MgO has resulted in a small lattice mismatch of about 2.8%. The measured saturation magnetization is 5.3 μB/f.u., which is smaller than the first-principles calculated value of 6.4 μB/f.u. for ferromagnetic spin arrangement. Magnetization measurements determined the bulk magnetocrystalline anisotropy constant Kv of about 11.3 Merg/cm3 (1.13 MJ/m3). The electron-transport behavior is similar to that of normal magnetic metals. These results indicate that Mn2PtSn may have promising applications in spintronic devices.

Topological Hall effect in thin films of Mn1.5PtSn

“…This is in agreement with the presence of a (weaker) THE, previously reported in bulk Mn 2 PtSn [25] and polycrystalline Mn 2 PtSn films (I 4m2) [26]. Notably, in single-crystalline Mn 2 PtSn films (I 4m2) [30] with the c axis in the plane, no T s and no THE were observed. We therefore propose that the contradicting observations (presence or absence of the THE in seemingly similar thin films) might be attributed to the different crystal structures and crystal orientations relative to the applied field.…”

“…Recently, the THE was observed in single-crystal thin films of Mn 2 RhSn [24] as well as in bulk Mn 2 PtSn [25] below a spin reorientation transition temperature (T s ) [28], and in polycrystalline Mn 2 PtSn films [26] for all temperatures below the Curie temperature. Conversely, the work of Jin et al shows no topological Hall signal or T s in epitaxially grown films of Mn 2 PtSn [30].…”

Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy

“…The µ of Mn 4 N films with different thicknesses increases with the increasing temperature from 5-50 K, and decreases in the temperature range from 50 to 300 K. The magnitude of µ about 10 2 cm 2 /(V•s) in Mn 4 N is one order larger than that in Mn 2 PtSn films (30 cm 2 /(V•s)), [42] which is consistent with the high conductivity of Mn 4 N films.…”

Heusler interfaces—Opportunities beyond spintronics?

“…Recent experiments confirm skyrmions in several Mn 2 Y Z compounds that crystallize in the tetragonal inverse Heusler structure (I4m2) that breaks bulk inversion [36,37]. The epitaxial film growth of several of these compounds has recently been demonstrated [132][133][134][135][136] providing a path towards further manipulation of the DM interaction in layered heterostuctures of these materials. Beyond skyrmion stability, recent theoretical proposals suggest that skyrmion/superconductor interfaces may be another platform for hosting Majorana fermions [137,138], potentially realizable in an all-Heusler system.…”