Structural, Microstructural, Magnetic, Ferroelectric, and Energy Bandgap Analysis of Heavily-Doped Pr at Bi Site of BiFeO3

Bismibanu, A.; Alagar, M.; Banu, I. B. Shameem; Vanga, Pradeep Reddy; Selvalakshmi, T.

doi:10.1007/s13538-021-01004-4

Cited by 8 publications

(1 citation statement)

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“…Multiferroic materials are unique and show both ferroelectric and (anti)ferromagnetic properties at room temperature simultaneously [1]. With the coexistence of such interesting properties, bismuth ferrite (BiFeO 3 , BFO) leads to the exciting and potential applications in the field of electronic devices, such as data storage [2], spintronics [3], sensors [4] and in ultrasonic devices [5].…”

Section: Introductionmentioning

confidence: 99%

Impact of (Sm, Sr) Co-Doping at Bi-Site on the Structural, Optical, Multiferroic and Dielectric Properties of Bismuth Ferrite Nanocomposites

Kossar

2023

ajc

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A series of samarium (Sm) and strontium (Sr) co-doped BiFeO3 (BFO) and pure BiFeO3 (BFO) nanocomposites were synthesized by thesol-gel auto-combustion method. The X-ray diffraction pattern of the synthesized Sr:Sm BFO nanocomposites shows a rhombohedralperovskite structure. The morphological studies revealed that synthesized Sr:Sm BFO and pure BFO exhibit a regular arrangement ofgrains. The diffuse reflectance spectra (DRS) exhibit the doping of Sr:Sm BFO reduces the optical band gap values of BFO from 2.02 eVto 1.69 eV. It was observed that the prepared Sr:Sm BFO and undoped BFO samples show G-type antiferromagnetic behaviour and thevalues of saturation magnetization (Ms) increased by increasing the Sr:Sm BFO doping concentrations at the A site of BFO lattice. Themagnitude of the dielectric constant (εr) and dielectric loss (tan δ) were increased gradually with applied frequency and by increasingdoping concentration in the BFO matrix. The significant enhancement in the dielectric parameters with increasing Sm and Sr concentrations in BFO results in improved ferromagnetic properties that could be considered a promising candidate for some advanced device applications.

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